MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-3P D/C:09+
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-3P
D/C: 09+
Description: MOSFET N-CH 800V 10A TO-3P
Call
Call
MFG: N/A Package Cooled: 05+ D/C: TO Qty: 8000
Tel: 86-755-8279-1230
Adddate: 2010-03-22
MFG: FAIRCHILD Package Cooled: TO Qty: 800 Note: Delivery
Golden Harbour Industry Limited 
Tel: 86-755-83651739,83041561
Adddate: 2010-03-22
MFG: FAIRCHILD Package Cooled: TO-3PN D/C: `06+(pb-free) Qty: 10532 Note: new in stock
Contact: Ms.Melody Chen/Julie Chen
Tel: 86-755-82535765
Adddate: 2010-03-22
MFG: FAIRCHILD Package Cooled: TO-3P D/C: 09+ Qty: 14000
SHENZHEN ZHENGRUN ELECTRONICS CO., LTD. 
Tel: 86-755-82724686
Adddate: 2010-03-22
MFG: FSC Package Cooled: 9800 D/C: TO
Tel: 86-755-83958497
Adddate: 2010-03-22
MFG: FAIRCHILD Qty: 8800
Tel: 86-755-28536689
Adddate: 2010-03-22
MFG: FAIRCHILD Package Cooled: TO-3PN D/C: 08+ Qty: 24950
Contact: Ms.Jenny Fu/George Ming
Tel: 86-755-8268-6456/8268-6500
Adddate: 2010-03-22
MFG: FAIRCHILD Package Cooled: 6000
Tel: 86-10-58816651/58816653
Adddate: 2010-03-22
PDF/DataSheet Download
Datasheet: FQA10N80C
File Size: 634326 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
MFG: N/A Package Cooled: 05+ D/C: TO Qty: 8000
Tel: 86-755-8279-1230
Adddate: 2010-03-22
MFG: FAIRCHILD Package Cooled: TO Qty: 800 Note: Delivery
Golden Harbour Industry Limited 
Tel: 86-755-83651739,83041561
Adddate: 2010-03-22
MFG: FSC Package Cooled: 9800 D/C: TO
Tel: 86-755-83958497
Adddate: 2010-03-22
MFG: 仙童 Package Cooled: TO-3P D/C: 07+ Qty: 8000
Singo(HK)technology Co.,Limited 
Tel: 0086-0755-82817286
Adddate: 2010-03-22
MFG: FAIRCHILD Package Cooled: TO-3P D/C: 03+ Qty: 390 Note: XLL
Better(HK) Electronics co., LTD 
Tel: 86-754-82333855
Adddate: 2010-03-22
MFG: FAIRCHILD Package Cooled: to-3p D/C: 09+/pb Qty: 30000
HONG KONG TERRY ELECTRONICS INTERNATIONAL COMPANY 
Tel: 86-755-23956340
Adddate: 2010-03-22
Package Cooled: 700 D/C: 0008
International Source Trading Co., Ltd 
Tel: 86-755-61315501
Adddate: 2010-03-22
PDF/DataSheet Download
Datasheet: FQA11N40
File Size: 720851 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
MFG: FSC Qty: 4500
Tel: 86-755-28536689
Adddate: 2010-03-22
MFG: FAIRCHILD Package Cooled: TO-247 D/C: 09+ Qty: 50000
Aslan Internatinal Trade Co., Limited 
Tel: 86-754-84420881
Adddate: 2010-03-22
Qty: 4500
Tel: 86-755-28536689
Adddate: 2010-03-22
MFG: 仙童 Package Cooled: 06+ D/C: TO-247 Qty: 3600
ZHOU SHENG (HONG KONG) ELECTRONICS CO., LIMITED 
Tel: 86-0755-83643693
Adddate: 2010-03-22
MFG: FAIRCHILD Package Cooled: TO-3P D/C: 09+ Qty: 14000
SHENZHEN ZHENGRUN ELECTRONICS CO., LTD. 
Tel: 86-755-82724686
Adddate: 2010-03-22
MFG: FSC Qty: 4500
Tel: 86-755-28536689
Adddate: 2010-03-22
MFG: FAIRCHILD Package Cooled: TO-247 D/C: 09+ Qty: 50000
Aslan Internatinal Trade Co., Limited 
Tel: 86-754-84420881
Adddate: 2010-03-22
PDF/DataSheet Download
Datasheet: FQA10N60C
File Size: 646153 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FQA10N80C |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 10A |
| Rds On (Max) @ Id, Vgs | 1.1 Ohm @ 5A, 10V |
| Input Capacitance (Ciss) @ Vds | 2800pF @ 25V |
| Power - Max | 240W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 58nC @ 10V |
| Package / Case | TO-3PN |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQA10N80C FQA10N80C |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
|
Symbol |
Parameter |
FQA10N80C |
Units |
|
VDSS |
Drain-Source Voltage |
800 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
10 |
A |
|
6.32 |
A | ||
|
IDM |
Drain Current - Pulsed (Note 1) |
40 |
A |
|
VGSS |
Gate-Source Voltage |
± 30 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
920 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
10 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
24 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.0 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C) - Derate above 25°C |
240 |
W |
|
1.92 |
W/℃ | ||
|
TJ,TSTG |
Operating and Storage Temperature Range |
-55 to+150 |
℃ |
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
℃ |
* 10A, 800V, RDS(on) = 1.1Ω@VGS = 10 V
* Low gate charge ( typical 44 nC)
* Low Crss ( typical 15 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
|
Symbol |
Parameter |
FQA11N40 |
Units |
|
VDSS |
Drain-Source Voltage |
400 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
11.8 |
A |
|
7.5 |
A | ||
|
IDM |
Drain Current - Pulsed (Note 1) |
47 |
A |
|
VGSS |
Gate-Source Voltage |
± 30 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
520 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
11.8 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
16 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C) - Derate above 25°C |
160 |
W |
|
1.28 |
W/℃ | ||
|
TJ,TSTG |
Operating and Storage Temperature Range |
-55 to+150 |
℃ |
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
℃ |
* 11.8A, 400V, RDS(on) = 0.48Ω @VGS = 10 V
* Low gate charge ( typical 27 nC)
* Low Crss ( typical 20 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability