FQA10N60C

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 10 A
Package / Case : TO-3P
Resistance Drain-Source RDS (on) : 0.73 Ohms


Features:

* 10A, 600V, R_DS(on)  = 0.73  @V_GS  = 10 V
* Low gate charge ( typical 44 nC)
* Low Crss ( typical  18 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability



Specifications

Symbol	Parameter	FQA10N60C	Units
VDSS	Drain-Source Voltage	600	V
ID	Drain Current     - Continuous (TC = 25°C)                   - Continuous (TC = 100°C)	10	A
		6	A
IDM	Drain Current - Pulsed             (Note 1)	40	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy      (Note 2)	700	mJ
IAR	Avalanche Current                   (Note 1)	10	A
EAR	Repetitive Avalanche Energy         (Note 1)	19.2	mJ
dv/dt	Peak Diode Recovery dv/dt           (Note 3)	4.5	V/ns
PD	Power Dissipation     (TC = 25°C)                      - Derate above 25°C	192	W
		1.53	W/
TJ,TSTG	Operating and Storage Temperature Range	-55 to+150
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

Description

    These N-Channel enhancement mode power FQA10N60C field effect transistors are produced using Fairchild`s proprietary,planar stripe,DMOS technology.

    This advanced technology FQA10N60C has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.FQA10N60C are  well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.

Parameters:

Technical/Catalog Information	FQA10N60C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	730 mOhm @ 5A, 10V
Input Capacitance (Ciss) @ Vds	2040pF @ 25V
Power - Max	192W
Packaging	Tube
Gate Charge (Qg) @ Vgs	57nC @ 10V
Package / Case	TO-3PN
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA10N60C FQA10N60C