Position: Home > DataSheet > Index F > FQA Series > FQA20N40, FQA22N30, FQA22N50A

Low Cost Custom Prototype PCB Manufacturer

FQA20N40, FQA22N30, FQA22N50A

Table of contents:
Info of FQA20N40
Info of FQA22N30
Info of FQA22N50A

FQA20N40, FQA22N30, FQA22N50A Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:09+

FQA20N40, FQA22N30, FQA22N50A Datasheet download

Five Points

Part Number: FQA20N40

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-247

D/C: 09+

Description: MOSFET N-CH 400V 19.5A TO-3P

Attentive hint

Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.

How to buy ?

How long will receive a response.

Top Sellers:

TOP

FQA20N40 Parameters

Technical/Catalog Information	FQA20N40
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	400V
Current - Continuous Drain (Id) @ 25° C	19.5A
Rds On (Max) @ Id, Vgs	220 mOhm @ 9.8A, 10V
Input Capacitance (Ciss) @ Vds	2800pF @ 25V
Power - Max	200W
Packaging	Tube
Gate Charge (Qg) @ Vgs	75nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA20N40 FQA20N40

FQA20N40 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.

FQA20N40 Maximum Ratings

Symbol	Parameter	FQA20N40	Units
V_DSS	Drain-Source Voltage	400	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	19.5	A
I_D		12.3	A
I_DM	Drain Current - Pulsed (Note 1)	78	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	1150	mJ
I_AR	Avalanche Current (Note 1)	19.5	A
E_AR	Repetitive Avalanche Energy (Note 1)	20	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	200	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	1.59	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA20N40 Features

* 19.5A, 400V, R_DS(on) = 0.22 @V_GS = 10 V
* Low gate charge ( typical 60 nC)
* Low Crss ( typical 45 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FQA22N30 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.

FQA22N30 Maximum Ratings

Symbol	Parameter	FQA22N30	Units
V_DSS	Drain-Source Voltage	300	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	22	A
I_D		13.9	A
I_DM	Drain Current - Pulsed (Note 1)	88	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	1000	mJ
I_AR	Avalanche Current (Note 1)	22	A
E_AR	Repetitive Avalanche Energy (Note 1)	19	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	190	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	1.52	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA22N30 Features

* 22A, 300V, R_DS(on) = 0.16 @V_GS = 10 V
* Low gate charge ( typical  47 nC)
* Low Crss ( typical  40 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

Hotspot Suppliers Product

Product List A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9

MT58L64L18CT-10

Price: 4-6 USD

MT58L64L18CT-10 TQFP100
DL-7140-211M

Price: 5-6.5 USD

DL-7140-211M laser tube
74LVC74APG

Price: 4-5 USD

74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2

Price: 6.5-8 USD

CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX

Price: 0.284-0.286 USD

PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2

Price: 1-2 USD

IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB

Price: 1-2 USD

a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1

Price: 0.124-0.2 USD

PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L

Price: 0.177-0.178 USD

RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A

Price: 0.053-0.055 USD

STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013

Price: 1.45-1.5 USD

STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B

Price: 0.073-0.075 USD

SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components