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FQA22P10, FQA24N50, FQA24N50A

Table of contents:
Info of FQA22P10
Info of FQA24N50
Info of FQA24N50A

FQA22P10, FQA24N50, FQA24N50A Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:05+

FQA22P10, FQA24N50, FQA24N50A Datasheet download

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Part Number: FQA24N50

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-247

D/C: 05+

Description: MOSFET N-CHAN 500V 24A TO-3P

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FQA22P10 Parameters

Technical/Catalog Information	FQA22P10
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	24A
Rds On (Max) @ Id, Vgs	125 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds	1500pF @ 25V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	50nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA22P10 FQA22P10

FQA22P10 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control.

FQA22P10 Maximum Ratings

Symbol	Parameter	FQA22P10	Units
V_DSS	Drain-Source Voltage	-100	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	-24	A
I_D		-17	A
I_DM	Drain Current - Pulsed (Note 1)	-96	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	710	mJ
I_AR	Avalanche Current (Note 1)	-24	A
E_AR	Repetitive Avalanche Energy (Note 1)	15	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	-6.0	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	150	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	1.0	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA22P10 Features

* -24A, -100V, R _DS(on) = 0.125 @V_GS =-10 V
* Low gate charge ( typical 40 nC)
* Low Crss ( typical 160 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating

FQA24N50 Parameters

Technical/Catalog Information	FQA24N50
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	24A
Rds On (Max) @ Id, Vgs	200 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds	4500pF @ 25V
Power - Max	290W
Packaging	Tube
Gate Charge (Qg) @ Vgs	120nC @ 10V
Package / Case	TO-3PN
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA24N50 FQA24N50

FQA24N50 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild`s proprietary,planar stripe,DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.

FQA24N50 Maximum Ratings

Symbol	Parameter	FQA24N50	Units
V_DSS	Drain-Source Voltage	500	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	24	A
I_D		15.2	A
I_DM	Drain Current - Pulsed (Note 1)	96	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	1100	mJ
I_AR	Avalanche Current (Note 1)	24	A
E_AR	Repetitive Avalanche Energy (Note 1)	29	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	290	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	2.33	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA24N50 Features

* 24A, 500V, R_DS(on) = 0.2 @V_GS = 10 V
* Low gate charge ( typical 90 nC)
* Low Crss ( typical 55 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

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