MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:09+
FQA24N50F, FQA24N60, FQA24N60A Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: N/A
D/C: 09+
Description: MOSFET N-CH 600V 23.5A TO-3P
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PDF/DataSheet Download
Datasheet: FQA24N50F
File Size: 632765 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQA24N60
File Size: 649071 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQA10N60C
File Size: 646153 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FQA24N50F |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 24A |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 12A, 10V |
| Input Capacitance (Ciss) @ Vds | 4500pF @ 25V |
| Power - Max | 290W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 120nC @ 10V |
| Package / Case | TO-3PN |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQA24N50F FQA24N50F |
These N-Channel enhancement mode power field effec transistors are produced using Fairchild's proprietary planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are wel suited for high efficiency switch mode power supplies where the body diode is used such as phase-shift ZVS basic full-bridge topology.
|
Symbol |
Parameter |
FQA24N50F |
Units |
|
VDSS |
Drain-Source Voltage |
500 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
24 |
A |
|
15.2 |
A | ||
|
IDM |
Drain Current - Pulsed (Note 1) |
96 |
A |
|
VGSS |
Gate-Source Voltage |
± 30 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
1100 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
24 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
29 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
15 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C) - Derate above 25°C |
290 |
W |
|
2.33 |
W/ | ||
|
TJ,TSTG |
Operating and Storage Temperature Range |
-55 to+150 |
|
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
| Technical/Catalog Information | FQA24N60 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 23.5A |
| Rds On (Max) @ Id, Vgs | 240 mOhm @ 11.8A, 10V |
| Input Capacitance (Ciss) @ Vds | 5500pF @ 25V |
| Power - Max | 310W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 145nC @ 10V |
| Package / Case | TO-3PN |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQA24N60 FQA24N60 |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
| Symbol | Parameter |
FQA33N10L |
Units |
| VDSS | Drain-Source Voltage |
600 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
23.5 |
A |
|
14.9 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
94 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
1300 |
mJ |
| IAR | Avalanche Current (Note 1) |
23.5 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
31 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
310 |
W |
|
2.5 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
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