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These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control.
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300
FQA28N15 Features
* 33A, 150V, R DS(on) = 0.09 @VGS = 10 V * Low gate charge ( typical 40 nC) * Low Crss ( typical 50 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability * 175°C maximum junction temperature rating
FQA28N50 Parameters
Technical/Catalog Information
FQA28N50
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
500V
Current - Continuous Drain (Id) @ 25° C
28.4A
Rds On (Max) @ Id, Vgs
160 mOhm @ 14.2A, 10V
Input Capacitance (Ciss) @ Vds
5600pF @ 25V
Power - Max
310W
Packaging
Tube
Gate Charge (Qg) @ Vgs
140nC @ 10V
Package / Case
TO-3PN
FET Feature
Standard
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
FQA28N50 FQA28N50
FQA28N50 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild`s proprietary,planar stripe,DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild`s proprietary,planar stripe,DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.
