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FQA30N40, FQA32N20C, FQA32N50

Table of contents:
Info of FQA30N40
Info of FQA32N20C
Info of FQA32N50

FQA30N40, FQA32N20C, FQA32N50 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:08+

FQA30N40, FQA32N20C, FQA32N50 Datasheet download

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Part Number: FQA32N20C

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-247

D/C: 08+

Description: MOSFET N-CH 200V 32A TO-3P

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FQA30N40 Parameters

Technical/Catalog Information	FQA30N40
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	400V
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	140 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	4400pF @ 25V
Power - Max	290W
Packaging	Tube
Gate Charge (Qg) @ Vgs	120nC @ 10V
Package / Case	TO-3PN
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA30N40 FQA30N40

FQA30N40 General Description

These N-Channel enhancement mode power field effect planar stripe,DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.

FQA30N40 Maximum Ratings

Symbol	Parameter	FQA30N40	Units
V_DSS	Drain-Source Voltage	400	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	30	A
I_D		19	A
I_DM	Drain Current - Pulsed (Note 1)	120	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	1400	mJ
I_AR	Avalanche Current (Note 1)	30	A
E_AR	Repetitive Avalanche Energy (Note 1)	29	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	290	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	2.33	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA30N40 Features

* 30A, 400V, R_DS(on) = 0.14 @V_GS = 10 V
* Low gate charge ( typical 90 nC)
* Low Crss ( typical 60 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FQA32N20C Parameters

Technical/Catalog Information	FQA32N20C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	32A
Rds On (Max) @ Id, Vgs	82 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds	2220pF @ 25V
Power - Max	204W
Packaging	Tube
Gate Charge (Qg) @ Vgs	110nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA32N20C FQA32N20C

FQA32N20C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.

FQA32N20C Maximum Ratings

Symbol	Parameter	FQA32N20C	Units
VDSS	Drain-Source Voltage	200	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	32	A
ID		20.4	A
IDM	Drain Current - Pulsed (Note 1)	128	A
VGSS	Gate-Source Voltage	±30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	955	mJ
IAR	Avalanche Current (Note 1)	32	A
EAR	Repetitive Avalanche Energy (Note 1)	20.4	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	204	W
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	1.63	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQA32N20C Features

• 32A, 200V, RDS(on) = 0.082Ω @VGS = 10 V
• Low gate charge ( typical 82.5 nC)
• Low Crss ( typical 185 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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