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FQA33N10L, FQA34N20, FQA34N20L

Table of contents:
Info of FQA33N10L
Info of FQA34N20
Info of FQA34N20L

FQA33N10L, FQA34N20, FQA34N20L Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:01+

FQA33N10L, FQA34N20, FQA34N20L Datasheet download

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Part Number: FQA33N10L

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: N/A

D/C: 01+

Description: MOSFET N-CH 200V 34A TO-3P

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FQA33N10L Parameters

Technical/Catalog Information	FQA33N10L
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	36A
Rds On (Max) @ Id, Vgs	52 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds	1630pF @ 25V
Power - Max	163W
Packaging	Tube
Gate Charge (Qg) @ Vgs	40nC @ 5V
Package / Case	TO-3P
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA33N10L FQA33N10L

FQA33N10L General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.

FQA33N10L Maximum Ratings

Symbol	Parameter	FQA33N10L	Units
VDSS	Drain-Source Voltage	100	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	36	A
ID		25.5	A
IDM	Drain Current - Pulsed (Note 1)	144	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	430	mJ
IAR	Avalanche Current (Note 1)	36	A
EAR	Repetitive Avalanche Energy (Note 1)	16.3	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	6.0	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	163	W
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	1.09	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQA33N10L Features

• 36A, 100V, RDS(on) = 0.052Ω @VGS = 10 V
• Low gate charge ( typical 30 nC)
• Low Crss ( typical 70 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

FQA34N20 Parameters

Technical/Catalog Information	FQA34N20
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	34A
Rds On (Max) @ Id, Vgs	75 mOhm @ 17A, 10V
Input Capacitance (Ciss) @ Vds	3100pF @ 25V
Power - Max	210W
Packaging	Tube
Gate Charge (Qg) @ Vgs	78nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA34N20 FQA34N20

FQA34N20L Parameters

Technical/Catalog Information	FQA34N20L
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	34A
Rds On (Max) @ Id, Vgs	75 mOhm @ 17A, 10V
Input Capacitance (Ciss) @ Vds	3900pF @ 25V
Power - Max	210W
Packaging	Tube
Gate Charge (Qg) @ Vgs	72nC @ 5V
Package / Case	TO-3P
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA34N20L FQA34N20L

FQA34N20L General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control.

FQA34N20L Maximum Ratings

Symbol	Parameter	FQA34N20L	Units
V_DSS	Drain-Source Voltage	200	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	34	A
I_D		21	A
I_DM	Drain Current - Pulsed (Note 1)	136	A
V_GSS	Gate-Source Voltage	± 20	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	640	mJ
I_AR	Avalanche Current (Note 1)	34	A
E_AR	Repetitive Avalanche Energy (Note 1)	21	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	210	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	1.67	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+175
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA34N20L Features

* 34A, 200V, R _DS(on) = 0.075 @V_GS = 10 V
* Low gate charge ( typical 55 nC)
* Low Crss ( typical 52 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating
* Low level gate drive requirement allowing direct
operation from logic drivers

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