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FQA34N25, FQA35N40, FQA36P15

Table of contents:
Info of FQA34N25
Info of FQA35N40
Info of FQA36P15

FQA34N25, FQA35N40, FQA36P15 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:09+

FQA34N25, FQA35N40, FQA36P15 Datasheet download

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Part Number: FQA34N25

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-247

D/C: 09+

Description: MOSFET P-CH 150V 36A TO-3P

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FQA34N25 Parameters

Technical/Catalog Information	FQA34N25
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	34A
Rds On (Max) @ Id, Vgs	85 mOhm @ 17A, 10V
Input Capacitance (Ciss) @ Vds	2750pF @ 25V
Power - Max	245W
Packaging	Tube
Gate Charge (Qg) @ Vgs	80nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA34N25 FQA34N25

FQA34N25 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.

FQA34N25 Maximum Ratings

Symbol	Parameter	FQA34N25	Units
V_DSS	Drain-Source Voltage	250	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	34	A
I_D		21.3	A
I_DM	Drain Current - Pulsed (Note 1)	136	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	700	mJ
I_AR	Avalanche Current (Note 1)	34	A
E_AR	Repetitive Avalanche Energy (Note 1)	24.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.8	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	245	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	1.96	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA34N25 Features

* 34A, 250V, R_DS(on) = 0.085 @V_GS = 10 V
* Low gate charge ( typical 60 nC)
* Low Crss ( typical 60 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FQA35N40 Parameters

Technical/Catalog Information	FQA35N40
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	400V
Current - Continuous Drain (Id) @ 25° C	35A
Rds On (Max) @ Id, Vgs	105 mOhm @ 17.5A, 10V
Input Capacitance (Ciss) @ Vds	5600pF @ 25V
Power - Max	310W
Packaging	Tube
Gate Charge (Qg) @ Vgs	140nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA35N40 FQA35N40

FQA35N40 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.

FQA35N40 Maximum Ratings

Symbol	Parameter	FQA35N40	Units
V_DSS	Drain-Source Voltage	400	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	35	A
I_D		22	A
I_DM	Drain Current - Pulsed (Note 1)	140	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	1600	mJ
I_AR	Avalanche Current (Note 1)	35	A
E_AR	Repetitive Avalanche Energy (Note 1)	31	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	310	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	2.5	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA35N40 Features

* 35A, 400V, R_DS(on) = 0.105 @V_GS = 10 V
* Low gate charge ( typical 110 nC)
* Low Crss ( typical 65 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FQA36P15 Parameters

Technical/Catalog Information	FQA36P15
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	36A
Rds On (Max) @ Id, Vgs	90 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds	3320pF @ 25V
Power - Max	294W
Packaging	Tube
Gate Charge (Qg) @ Vgs	105nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA36P15 FQA36P15

FQA36P15 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control.

FQA36P15 Maximum Ratings

Symbol	Parameter	FQA36P15	Units
V_DSS	Drain-Source Voltage	-150	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	-36	A
I_D		-25.5	A
I_DM	Drain Current - Pulsed (Note 1)	-144	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	1400	mJ
I_AR	Avalanche Current (Note 1)	-36	A
E_AR	Repetitive Avalanche Energy (Note 1)	29.4	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	-5.0	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	294	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	1.96	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+175
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA36P15 Features

* -36A, -150V, R _DS(on) = 0.09 @V_GS = -10 V
* Low gate charge ( typical 81 nC)
* Low Crss ( typical 110 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating

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