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FQA40N25, FQA44N08, FQA44N10

Table of contents:
Info of FQA40N25
Info of FQA44N08
Info of FQA44N10

FQA40N25, FQA44N08, FQA44N10 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-3P D/C:08+

FQA40N25, FQA44N08, FQA44N10 Datasheet download

Five Points

Part Number: FQA44N10

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-3P

D/C: 08+

Description: MOSFET N-CH 100V 48A TO-3P

Price Break

450

Unit Price

1.56940

Extended Price

706.23

(All prices are in USD) Prices for reference only

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FQA40N25 Parameters

Technical/Catalog Information	FQA40N25
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	40A
Rds On (Max) @ Id, Vgs	70 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds	4000pF @ 25V
Power - Max	280W
Packaging	Tube
Gate Charge (Qg) @ Vgs	110nC @ 10V
Package / Case	TO-3PN
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA40N25 FQA40N25

FQA40N25 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.

FQA40N25 Maximum Ratings

Symbol	Parameter	FQA40N25	Units
V_DSS	Drain-Source Voltage	250	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	40	A
I_D		25	A
I_DM	Drain Current - Pulsed (Note 1)	160	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	800	mJ
I_AR	Avalanche Current (Note 1)	40	A
E_AR	Repetitive Avalanche Energy (Note 1)	28	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	280	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	2.22	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA40N25 Features

* 40A, 250V, R_DS(on) = 0.07 @V_GS = 10 V
* Low gate charge ( typical 60 nC)
* Low Crss ( typical 60 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FQA44N08 Parameters

Technical/Catalog Information	FQA44N08
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25° C	49.8A
Rds On (Max) @ Id, Vgs	34 mOhm @ 24.9A, 10V
Input Capacitance (Ciss) @ Vds	1430pF @ 25V
Power - Max	163W
Packaging	Tube
Gate Charge (Qg) @ Vgs	50nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA44N08 FQA44N08

FQA44N08 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.

FQA44N08 Maximum Ratings

Symbol	Parameter	FQA44N08	Units
VDSS	Drain-Source Voltage	80	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	49.8	A
ID		35.2	A
IDM	Drain Current - Pulsed (Note 1)	199.2	A
VGSS	Gate-Source Voltage	±25	V
EAS	Single Pulsed Avalanche Energy (Note 2)	450	mJ
IAR	Avalanche Current (Note 1)	49.8	A
EAR	Repetitive Avalanche Energy (Note 1)	16.3	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	6.5	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	163	W
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	1.09	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQA44N08 Features

• 49.8A, 80V, RDS(on) = 0.034Ω @VGS = 10 V
• Low gate charge ( typical 38 nC)
• Low Crss ( typical 90 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

FQA44N10 Parameters

Technical/Catalog Information	FQA44N10
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	48A
Rds On (Max) @ Id, Vgs	39 mOhm @ 24A, 10V
Input Capacitance (Ciss) @ Vds	1800pF @ 25V
Power - Max	180W
Packaging	Tube
Gate Charge (Qg) @ Vgs	62nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA44N10 FQA44N10

FQA44N10 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and

FQA44N10 Maximum Ratings

Symbol	Parameter	FQA33N10L	Units
VDSS	Drain-Source Voltage	100	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	48	A
ID		34	A
IDM	Drain Current - Pulsed (Note 1)	192	A
VGSS	Gate-Source Voltage	± 25	V
EAS	Single Pulsed Avalanche Energy (Note 2)	530	mJ
IAR	Avalanche Current (Note 1)	48	A
EAR	Repetitive Avalanche Energy (Note 1)	18	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	6.0	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	180	W
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	1.2	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQA44N10 Features

• 48A, 100V, RDS(on) = 0.039Ω @VGS = 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 85 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

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