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FQA47P06, FQA48N20, FQA50N06

Table of contents:
Info of FQA47P06
Info of FQA48N20
Info of FQA50N06

FQA47P06, FQA48N20, FQA50N06 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-3P D/C:TO

FQA47P06, FQA48N20, FQA50N06 Datasheet download

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Part Number: FQA47P06

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-3P

D/C: TO

Description: MOSFET N-CH 200V 48A TO-3P

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FQA47P06 Parameters

Technical/Catalog Information	FQA47P06
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	55A
Rds On (Max) @ Id, Vgs	26 mOhm @ 27.5A, 10V
Input Capacitance (Ciss) @ Vds	3600pF @ 25V
Power - Max	214W
Packaging	Tube
Gate Charge (Qg) @ Vgs	110nC @ 10V
Package / Case	TO-3PN
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA47P06 FQA47P06

FQA47P06 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

FQA47P06 Maximum Ratings

Symbol	Parameter	FQA47P06	Units
V_DSS	Drain-Source Voltage	-60	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	-55	A
I_D		-38.9	A
I_DM	Drain Current - Pulsed (Note 1)	-220	A
V_GSS	Gate-Source Voltage	± 25	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	820	mJ
I_AR	Avalanche Current (Note 1)	-55	A
E_AR	Repetitive Avalanche Energy (Note 1)	21.4	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	-7.0	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	21.4	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	1.43	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+175
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA47P06 Features

* -55A, -60V, R_DS(on) = 0.026 @V_GS = -10 V
* Low gate charge ( typical 84 nC)
* Low Crss ( typical 320 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating

FQA48N20 Parameters

Technical/Catalog Information	FQA48N20
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	48A
Rds On (Max) @ Id, Vgs	50 mOhm @ 24A, 10V
Input Capacitance (Ciss) @ Vds	5000pF @ 25V
Power - Max	280W
Packaging	Tube
Gate Charge (Qg) @ Vgs	130nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA48N20 FQA48N20

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