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FQA55N10, FQA55N25, FQA58N08

Table of contents:
Info of FQA55N10
Info of FQA55N25
Info of FQA58N08

FQA55N10, FQA55N25, FQA58N08 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:08+

FQA55N10, FQA55N25, FQA58N08 Datasheet download

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Part Number: FQA55N10

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-247

D/C: 08+

Description: MOSFET N-CH 250V 55A TO-3P

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FQA55N10 Parameters

Technical/Catalog Information	FQA55N10
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	61A
Rds On (Max) @ Id, Vgs	26 mOhm @ 30.5A, 10V
Input Capacitance (Ciss) @ Vds	2730pF @ 25V
Power - Max	190W
Packaging	Tube
Gate Charge (Qg) @ Vgs	98nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA55N10 FQA55N10

FQA55N10 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

FQA55N10 Maximum Ratings

Symbol	Parameter	FQA33N10L	Units
VDSS	Drain-Source Voltage	100	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	61	A
ID		43.1	A
IDM	Drain Current - Pulsed (Note 1)	244	A
VGSS	Gate-Source Voltage	± 25	V
EAS	Single Pulsed Avalanche Energy (Note 2)	1100	mJ
IAR	Avalanche Current (Note 1)	61	A
EAR	Repetitive Avalanche Energy (Note 1)	19	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	6.0	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	190	W
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	1.27	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQA55N10 Features

• 61A, 100V, RDS(on) = 0.026Ω @VGS = 10 V
• Low gate charge ( typical 75 nC)
• Low Crss ( typical 130 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

FQA55N25 Parameters

Technical/Catalog Information	FQA55N25
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	55A
Rds On (Max) @ Id, Vgs	40 mOhm @ 27.5A, 10V
Input Capacitance (Ciss) @ Vds	6250pF @ 25V
Power - Max	310W
Packaging	Tube
Gate Charge (Qg) @ Vgs	180nC @ 10V
Package / Case	TO-3PN
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA55N25 FQA55N25

FQA55N25 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.

FQA55N25 Maximum Ratings

Symbol	Parameter	FQA55N25	Units
V_DSS	Drain-Source Voltage	250	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	55	A
I_D		34.8	A
I_DM	Drain Current - Pulsed (Note 1)	220	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	1000	mJ
I_AR	Avalanche Current (Note 1)	55	A
E_AR	Repetitive Avalanche Energy (Note 1)	31	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	310	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	2.5	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA55N25 Features

* 55A, 250V, R_DS(on) = 0.04 @V_GS = 10 V
* Low gate charge ( typical 140 nC)
* Low Crss ( typical 125 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FQA58N08 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.

FQA58N08 Maximum Ratings

Symbol	Parameter	FQA58N08	Units
VDSS	Drain-Source Voltage	80	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	64	A
ID		45.2	A
IDM	Drain Current - Pulsed (Note 1)	256	A
VGSS	Gate-Source Voltage	±25	V
EAS	Single Pulsed Avalanche Energy (Note 2)	560	mJ
IAR	Avalanche Current (Note 1)	64	A
EAR	Repetitive Avalanche Energy (Note 1)	18	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	6.5	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	180	W
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	1.2	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQA58N08 Features

• 64A, 80V, RDS(on) = 0.024Ω @VGS = 10 V
• Low gate charge ( typical 50 nC)
• Low Crss ( typical 120 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

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