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FQA5N90, FQA60N10, FQA62N25C

Table of contents:
Info of FQA5N90
Info of FQA60N10
Info of FQA62N25C

FQA5N90, FQA60N10, FQA62N25C Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:08/09+

FQA5N90, FQA60N10, FQA62N25C Datasheet download

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Part Number: FQA5N90

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-247

D/C: 08/09+

Description: MOSFET N-CH 250V 62A TO-3P

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FQA5N90 Parameters

Technical/Catalog Information	FQA5N90
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	5.8A
Rds On (Max) @ Id, Vgs	2.3 Ohm @ 2.9A, 10V
Input Capacitance (Ciss) @ Vds	1550pF @ 25V
Power - Max	185W
Packaging	Tube
Gate Charge (Qg) @ Vgs	40nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA5N90 FQA5N90

FQA5N90 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

FQA5N90 Maximum Ratings

Symbol	Parameter	FQA5N90	Units
VDSS	Drain-Source Voltage	900	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	5.8	A
ID		3.67	A
IDM	Drain Current - Pulsed (Note 1)	23.2	A
VGSS	Gate-Source Voltage	±30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	660	mJ
IAR	Avalanche Current (Note 1)	5.8	A
EAR	Repetitive Avalanche Energy (Note 1)	18.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.0	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	185	W
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	1.47	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQA5N90 Features

• 5.8A, 900V, RDS(on) = 2.3 Ω @ VGS = 10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 13 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQA62N25C Parameters

Technical/Catalog Information	FQA62N25C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	62A
Rds On (Max) @ Id, Vgs	35 mOhm @ 31A, 10V
Input Capacitance (Ciss) @ Vds	6280pF @ 25V
Power - Max	298W
Packaging	Tube
Gate Charge (Qg) @ Vgs	130nC @ 10V
Package / Case	TO-3PN
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA62N25C FQA62N25C

FQA62N25C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.

FQA62N25C Maximum Ratings

Symbol	Parameter	FQA62N25C	Units
V_DSS	Drain-Source Voltage	250	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	62	A
I_D		39	A
I_DM	Drain Current - Pulsed (Note 1)	248	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	2300	mJ
I_AR	Avalanche Current (Note 1)	62	A
E_AR	Repetitive Avalanche Energy (Note 1)	29.8	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	298	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	2.38	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA62N25C Features

* 62A, 250V, R_DS(on) = 0.035 @V_GS = 10 V
* Low gate charge ( typical 100 nC)
* Low Crss ( typical 63.5 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

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