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FQA6N80, FQA6N90, FQA6N90C

Table of contents:
Info of FQA6N80
Info of FQA6N90
Info of FQA6N90C

FQA6N80, FQA6N90, FQA6N90C Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-3PN D/C:TO

FQA6N80, FQA6N90, FQA6N90C Datasheet download

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Part Number: FQA6N80

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-3PN

D/C: TO

Description: MOSFET N-CH 900V 6.4A TO-3P

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FQA6N80 Parameters

Technical/Catalog Information	FQA6N80
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	6.3A
Rds On (Max) @ Id, Vgs	1.95 Ohm @ 3.15A, 10V
Input Capacitance (Ciss) @ Vds	1500pF @ 25V
Power - Max	185W
Packaging	Tube
Gate Charge (Qg) @ Vgs	31nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA6N80 FQA6N80

FQA6N80 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

FQA6N80 Maximum Ratings

Symbol	Parameter	FQA10N80	Units
V_DSS	Drain-Source Voltage	800	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	6.3	A
I_D		4.0	A
I_DM	Drain Current - Pulsed (Note 1)	25.2	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	680	mJ
I_AR	Avalanche Current (Note 1)	6.3	A
E_AR	Repetitive Avalanche Energy (Note 1)	18.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.0	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	185	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	1.47	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA6N80 Features

* 6.3A, 800V, R_DS(on) = 1.95 @V_GS = 10 V
* Low gate charge ( typical 31 nC)
* Low Crss ( typical 14 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FQA6N90 Parameters

Technical/Catalog Information	FQA6N90
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	6.4A
Rds On (Max) @ Id, Vgs	1.9 Ohm @ 3.2A, 10V
Input Capacitance (Ciss) @ Vds	1880pF @ 25V
Power - Max	198W
Packaging	Tube
Gate Charge (Qg) @ Vgs	52nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA6N90 FQA6N90

FQA6N90C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

FQA6N90C Maximum Ratings

Symbol	Parameter	FQA6N90C	Units
V_DSS	Drain-Source Voltage	900	V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	6.4	A
I_D		4.0	A
I_DM	Drain Current - Pulsed (Note 1)	25.6	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	650	mJ
I_AR	Avalanche Current (Note 1)	6.4	A
E_AR	Repetitive Avalanche Energy (Note 1)	19.8	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.0	V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	198	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	1.59	W/°C
TJ, T_STG	Operating and Storage Temperature Range	-55to+150	°C
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQA6N90C Features

• 6A, 900V, R_DS(on) = 2.3Ω @V_GS = 10 V
• Low gate charge ( typical 30 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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