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FQA90N10V2, FQA90N15, FQA9N50

Table of contents:
Info of FQA90N10V2
Info of FQA90N15
Info of FQA9N50

FQA90N10V2, FQA90N15, FQA9N50 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-3P D/C:08+

FQA90N10V2, FQA90N15, FQA9N50 Datasheet download

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Part Number: FQA90N10V2

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-3P

D/C: 08+

Description: MOSFET N-CH 500V 9.6A TO-3P

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FQA90N10V2 Parameters

Technical/Catalog Information	FQA90N10V2
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	105A
Rds On (Max) @ Id, Vgs	10 mOhm @ 52.5A, 10V
Input Capacitance (Ciss) @ Vds	6150pF @ 25V
Power - Max	330W
Packaging	Tube
Gate Charge (Qg) @ Vgs	191nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA90N10V2 FQA90N10V2

FQA90N10V2 General Description

These N-Channel enhancement mode power field effect transis-tors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required.

FQA90N10V2 Maximum Ratings

Symbol	Parameter	FQA90N10V2	Units
V_DSS	Drain-Source Voltage	100	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	105	A
I_D		78	A
I_DM	Drain Current - Pulsed (Note 1)	420	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	2430	mJ
I_AR	Avalanche Current (Note 1)	105	A
E_AR	Repetitive Avalanche Energy (Note 1)	33	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	330	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	2.2	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA90N10V2 Features

* 105A, 100V, R_DS(on) = 10m @V_GS = 10 V
* Low gate charge ( typical 147 nC)
* Low Crss ( typical 300 pF)
*Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating

FQA90N15 Parameters

Technical/Catalog Information	FQA90N15
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	90A
Rds On (Max) @ Id, Vgs	18 mOhm @ 45A, 10V
Input Capacitance (Ciss) @ Vds	8700pF @ 25V
Power - Max	375W
Packaging	Tube
Gate Charge (Qg) @ Vgs	285nC @ 10V
Package / Case	TO-3PN
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA90N15 FQA90N15

FQA90N15 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifire, high efficiency switching for DC/DC converters, and DC motor control, uninterrupted power supply.

FQA90N15 Maximum Ratings

Symbol	Parameter	FQH90N15/FQA90N15	Units
V_DSS	Drain-Source Voltage	150	V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	910 63.5	A A
I_DM	Drain Current - Pulsed (Note 1)	360	A
V_GSS	Gate-Source Voltage	± 25	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	1400	mJ
I_AR	Avalanche Current (Note 1)	70	A
E_AR	Repetitive Avalanche Energy (Note 1)	37.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	6.0	V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	375 2.5	W W/°C
TJ, T_STG	Operating and Storage Temperature Range	-55to+175	°C
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQA90N15 Features

• 90A, 150V, R_DS(on) = 0.018Ω @V_GS = 10 V
• Low gate charge (typical 220 nC)
• Low Crss (typical 200 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

FQA9N50 Parameters

Technical/Catalog Information	FQA9N50
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	9.6A
Rds On (Max) @ Id, Vgs	730 mOhm @ 4.8A, 10V
Input Capacitance (Ciss) @ Vds	1450pF @ 25V
Power - Max	160W
Packaging	Tube
Gate Charge (Qg) @ Vgs	36nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA9N50 FQA9N50

FQA9N50 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild`s proprietary,planar stripe,DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.

FQA9N50 Maximum Ratings

Symbol	Parameter	FQA9N50	Units
V_DSS	Drain-Source Voltage	500	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	9.6	A
I_D		6.1	A
I_DM	Drain Current - Pulsed (Note 1)	39	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	360	mJ
I_AR	Avalanche Current (Note 1)	9.6	A
E_AR	Repetitive Avalanche Energy (Note 1)	16	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	160	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	1.28	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA9N50 Features

* 9.6A, 500V, R_DS(on) = 0.73 @V_GS = 10 V
* Low gate charge ( typical 28 nC)
* Low Crss ( typical 20 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

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