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FQA9N90C(TO3P/ROHS), FQAB5N90TM, FQAF14N30

Table of contents:
Info of FQA9N90C(TO3P/ROHS)
Info of FQAB5N90TM
Info of FQAF14N30

FQA9N90C(TO3P/ROHS), FQAB5N90TM, FQAF14N30 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-247F D/C:04

FQA9N90C(TO3P/ROHS), FQAB5N90TM, FQAF14N30 Picture

FQA9N90C(TO3P/ROHS), FQAB5N90TM, FQAF14N30 Datasheet download

Five Points

Part Number: FQA9N90C(TO3P/ROHS)

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-247F

D/C: 04

Description: MOSFET N-CH 300V 11.4A TO-3PF

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FQAF14N30 Parameters

Technical/Catalog Information	FQAF14N30
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25° C	11.4A
Rds On (Max) @ Id, Vgs	290 mOhm @ 5.7A, 10V
Input Capacitance (Ciss) @ Vds	1360pF @ 25V
Power - Max	90W
Packaging	Tube
Gate Charge (Qg) @ Vgs	40nC @ 10V
Package / Case	TO-3PF
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQAF14N30 FQAF14N30

FQAF14N30 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.

FQAF14N30 Maximum Ratings

Symbol	Parameter	FQAF14N30	Units
V_DSS	Drain-Source Voltage	300	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	11.4	A
I_D		7.2	A
I_DM	Drain Current - Pulsed (Note 1)	45.6	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	600	mJ
I_AR	Avalanche Current (Note 1)	11.4	A
E_AR	Repetitive Avalanche Energy (Note 1)	9.0	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	90	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	0.72	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQAF14N30 Features

* 11.4A, 300V, R_DS(on) = 0.29 @V_GS = 10 V
* Low gate charge ( typical  30 nC)
* Low Crss ( typical  23 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

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