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FQA9P25, FQAF10N80, FQAF11N40

Table of contents:
Info of FQA9P25
Info of FQAF10N80
Info of FQAF11N40

FQA9P25, FQAF10N80, FQAF11N40 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:09+

FQA9P25, FQAF10N80, FQAF11N40 Datasheet download

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Part Number: FQA9P25

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: N/A

D/C: 09+

Description: MOSFET N-CH 400V 8.8A TO-3PF

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FQA9P25 Parameters

Technical/Catalog Information	FQA9P25
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	10.5A
Rds On (Max) @ Id, Vgs	620 mOhm @ 5.25A, 10V
Input Capacitance (Ciss) @ Vds	1180pF @ 25V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	38nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA9P25 FQA9P25

FQA9P25 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.

FQA9P25 Maximum Ratings

Symbol	Parameter	FQA9P25	Units
V_DSS	Drain-Source Voltage	-250	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	-10.5	A
I_D		-6.6	A
I_DM	Drain Current - Pulsed (Note 1)	-42	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	650	mJ
I_AR	Avalanche Current (Note 1)	-10.5	A
E_AR	Repetitive Avalanche Energy (Note 1)	15	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	-5.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	150	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	1.2	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQA9P25 Features

*-10.5A, -250V, R_DS(on) = 0.62 @V_GS =-10 V
* Low gate charge ( typical  29 nC)
* Low Crss ( typical  27 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FQAF10N80 Parameters

Technical/Catalog Information	FQAF10N80
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	6.7A
Rds On (Max) @ Id, Vgs	1.05 Ohm @ 3.35A, 10V
Input Capacitance (Ciss) @ Vds	2700pF @ 25V
Power - Max	113W
Packaging	Tube
Gate Charge (Qg) @ Vgs	71nC @ 10V
Package / Case	TO-3PF
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQAF10N80 FQAF10N80

FQAF10N80 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

FQAF10N80 Maximum Ratings

Symbol	Parameter	FQAF10N80	Units
V_DSS	Drain-Source Voltage	800	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	6.7	A
I_D		4.24	A
I_DM	Drain Current - Pulsed (Note 1)	26.8	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	920	mJ
I_AR	Avalanche Current (Note 1)	6.7	A
E_AR	Repetitive Avalanche Energy (Note 1)	11.3	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.0	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	113	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	0.91	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQAF10N80 Features

* 6.7A, 800V, R_DS(on) = 1.05 @V_GS = 10 V
* Low gate charge ( typical 55 nC)
* Low Crss ( typical 24 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FQAF11N40 Parameters

Technical/Catalog Information	FQAF11N40
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	400V
Current - Continuous Drain (Id) @ 25° C	8.8A
Rds On (Max) @ Id, Vgs	480 mOhm @ 4.4A, 10V
Input Capacitance (Ciss) @ Vds	1400pF @ 25V
Power - Max	90W
Packaging	Tube
Gate Charge (Qg) @ Vgs	35nC @ 10V
Package / Case	TO-3PF
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQAF11N40 FQAF11N40

FQAF11N40 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.

FQAF11N40 Maximum Ratings

Symbol	Parameter	FQAF11N40	Units
V_DSS	Drain-Source Voltage	400	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	8.8	A
I_D		5.6	A
I_DM	Drain Current - Pulsed (Note 1)	35	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	520	mJ
I_AR	Avalanche Current (Note 1)	8.8	A
E_AR	Repetitive Avalanche Energy (Note 1)	9.0	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	90	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	0.72	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQAF11N40 Features

* 8.8A, 400V, R_DS(on) = 0.48 @V_GS = 10 V
* Low gate charge ( typical 27 nC)
* Low Crss ( typical 20 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

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