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FQAF12P20, FQAF13N50, FQAF13N80

Table of contents:
Info of FQAF12P20
Info of FQAF13N50
Info of FQAF13N80

FQAF12P20, FQAF13N50, FQAF13N80 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-247F D/C:09+

FQAF12P20, FQAF13N50, FQAF13N80 Datasheet download

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Part Number: FQAF12P20

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-247F

D/C: 09+

Description: MOSFET N-CH 800V 8A TO-3PF

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FQAF12P20 Parameters

Technical/Catalog Information	FQAF12P20
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	8.6A
Rds On (Max) @ Id, Vgs	470 mOhm @ 4.3A, 10V
Input Capacitance (Ciss) @ Vds	1200pF @ 25V
Power - Max	70W
Packaging	Tube
Gate Charge (Qg) @ Vgs	40nC @ 10V
Package / Case	TO-3PF
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQAF12P20 FQAF12P20

FQAF12P20 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild`s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.

FQAF12P20 Maximum Ratings

Symbol	Parameter	FQAF12P20	Units
V_DSS	Drain-Source Voltage	-200	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	-8.6	A
I_D		-5.4	A
I_DM	Drain Current - Pulsed (Note 1)	-34.4	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	810	mJ
I_AR	Avalanche Current (Note 1)	-8.6	A
E_AR	Repetitive Avalanche Energy (Note 1)	7.0	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	-5.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	70	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	0.56	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQAF12P20 Features

* -11.5A, -200V, R_DS(on) = 0.47 @V_GS = 10 V
* Low gate charge ( typical 31 nC)
* Low Crss ( typical 30 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FQAF13N50 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild`s proprietary,planar stripe,DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.

FQAF13N50 Maximum Ratings

Symbol	Parameter	FQAF13N50	Units
V_DSS	Drain-Source Voltage	500	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	9.6	A
I_D		6.1	A
I_DM	Drain Current - Pulsed (Note 1)	38.4	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	810	mJ
I_AR	Avalanche Current (Note 1)	9.6	A
E_AR	Repetitive Avalanche Energy (Note 1)	10	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	100	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	0.8	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQAF13N50 Features

* 9.6A, 500V, R_DS(on) = 0.43 @V_GS = 10 V
* Low gate charge ( typical 45 nC)
* Low Crss ( typical 25 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FQAF13N80 Parameters

Technical/Catalog Information	FQAF13N80
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	750 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds	3500pF @ 25V
Power - Max	120W
Packaging	Tube
Gate Charge (Qg) @ Vgs	88nC @ 10V
Package / Case	TO-3PF
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQAF13N80 FQAF13N80

FQAF13N80 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

FQAF13N80 Maximum Ratings

Symbol	Parameter	FQAF13N80	Units
VDSS	Drain-Source Voltage	800	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	8.0	A
ID		5.1	A
IDM	Drain Current - Pulsed (Note 1)	32	A
VGSS	Gate-Source Voltage	±30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	1100	mJ
IAR	Avalanche Current (Note 1)	8.0	A
EAR	Repetitive Avalanche Energy (Note 1)	12	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.0	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	120	W
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	0.96	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQAF13N80 Features

• 8.0A, 800V, RDS(on) = 0.75Ω @VGS = 10 V
• Low gate charge ( typical 68 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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