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FQAF16N25C, FQAF16N50, FQAF17N40

Table of contents:
Info of FQAF16N25C
Info of FQAF16N50
Info of FQAF17N40

FQAF16N25C, FQAF16N50, FQAF17N40 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-3PF D/C:TO

FQAF16N25C, FQAF16N50, FQAF17N40 Picture

FQAF16N25C, FQAF16N50, FQAF17N40 Datasheet download

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Part Number: FQAF16N25C

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-3PF

D/C: TO

Description: MOSFET N-CH 400V 12.2A TO-3PF

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FQAF16N25C Parameters

Technical/Catalog Information	FQAF16N25C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	11.4A
Rds On (Max) @ Id, Vgs	270 mOhm @ 5.7A, 10V
Input Capacitance (Ciss) @ Vds	1080pF @ 25V
Power - Max	73W
Packaging	Tube
Gate Charge (Qg) @ Vgs	53.5nC @ 10V
Package / Case	TO-3PF
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQAF16N25C FQAF16N25C

FQAF16N25C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.

FQAF16N25C Maximum Ratings

Symbol	Parameter	FQAF16N25C	Units
V_DSS	Drain-Source Voltage	250	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	11.4	A
I_D		7.2	A
I_DM	Drain Current - Pulsed (Note 1)	45.6	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	410	mJ
I_AR	Avalanche Current (Note 1)	11.4	A
E_AR	Repetitive Avalanche Energy (Note 1)	7.3	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	73	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	0.59	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQAF16N25C Features

* 11.4A, 250V, R_DS(on) = 0.27 @V_GS = 10 V
* Low gate charge ( typical  41 nC)
* Low Crss ( typical  68 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FQAF16N50 Parameters

Technical/Catalog Information	FQAF16N50
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	11.3A
Rds On (Max) @ Id, Vgs	320 mOhm @ 5.65A, 10V
Input Capacitance (Ciss) @ Vds	3000pF @ 25V
Power - Max	110W
Packaging	Tube
Gate Charge (Qg) @ Vgs	75nC @ 10V
Package / Case	TO-3PF
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQAF16N50 FQAF16N50

FQAF16N50 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild`s proprietary,planar stripe,DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.

FQAF16N50 Maximum Ratings

Symbol	Parameter	FQA10N80	Units
V_DSS	Drain-Source Voltage	500	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	11.3	A
I_D		7.15	A
I_DM	Drain Current - Pulsed (Note 1)	45.2	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	980	mJ
I_AR	Avalanche Current (Note 1)	11.3	A
E_AR	Repetitive Avalanche Energy (Note 1)	11	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	110	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	0.88	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQAF16N50 Features

* 11.3A, 500V, R_DS(on) = 0.32 @V_GS = 10 V
* Low gate charge ( typical 60 nC)
* Low Crss ( typical 35 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FQAF17N40 Parameters

Technical/Catalog Information	FQAF17N40
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	400V
Current - Continuous Drain (Id) @ 25° C	12.2A
Rds On (Max) @ Id, Vgs	270 mOhm @ 6.1A, 10V
Input Capacitance (Ciss) @ Vds	2300pF @ 25V
Power - Max	100W
Packaging	Tube
Gate Charge (Qg) @ Vgs	60nC @ 10V
Package / Case	TO-3PF
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQAF17N40 FQAF17N40

FQAF17N40 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.

FQAF17N40 Maximum Ratings

Symbol	Parameter	FQAF17N40	Units
V_DSS	Drain-Source Voltage	400	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	12.2	A
I_D		7.7	A
I_DM	Drain Current - Pulsed (Note 1)	48.8	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	1000	mJ
I_AR	Avalanche Current (Note 1)	12.2	A
E_AR	Repetitive Avalanche Energy (Note 1)	10	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	100	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	0.8	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQAF17N40 Features

* 12.2A, 400V, R_DS(on) = 0.27 @V_GS = 10 V
* Low gate charge ( typical 45 nC)
* Low Crss ( typical 30 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

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