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FQAF27N25, FQAF28N15, FQAF33N10

Table of contents:
Info of FQAF27N25
Info of FQAF28N15
Info of FQAF33N10

FQAF27N25, FQAF28N15, FQAF33N10 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-3P D/C:02+

FQAF27N25, FQAF28N15, FQAF33N10 Datasheet download

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Part Number: FQAF27N25

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-3P

D/C: 02+

Description: MOSFET N-CH 100V 25.8A TO-3PF

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FQAF27N25 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.

FQAF27N25 Maximum Ratings

Symbol	Parameter	FQAF27N25	Units
V_DSS	Drain-Source Voltage	250	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	19	A
I_D		12	A
I_DM	Drain Current - Pulsed (Note 1)	76	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	600	mJ
I_AR	Avalanche Current (Note 1)	19	A
E_AR	Repetitive Avalanche Energy (Note 1)	9.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	95	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	0.76	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQAF27N25 Features

* 19A, 250V, R_DS(on) = 0.11 @V_GS = 10 V
* Low gate charge ( typical  50 nC)
* Low Crss ( typical  45 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FQAF28N15 Parameters

Technical/Catalog Information	FQAF28N15
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	22A
Rds On (Max) @ Id, Vgs	90 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds	1600pF @ 25V
Power - Max	102W
Packaging	Tube
Gate Charge (Qg) @ Vgs	52nC @ 10V
Package / Case	TO-3PF
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQAF28N15 FQAF28N15

FQAF28N15 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild`s proprietary, planar stripe,DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for lo voltage applications such as audio amplifire,high efficiency switching for DC/DC conventers,and DC motor control,uninterrupted power supply.

FQAF28N15 Maximum Ratings

Symbol	Parameter	FQAF28N15	Units
V_DSS	Drain-Source Voltage	150	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	22	A
I_D		15.6	A
I_DM	Drain Current - Pulsed (Note 1)	88	A
V_GSS	Gate-Source Voltage	± 25	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	300	mJ
I_AR	Avalanche Current (Note 1)	22	A
E_AR	Repetitive Avalanche Energy (Note 1)	10.2	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	102	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	0.68	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+175
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQAF28N15 Features

* 22A, 150V, R _DS(on) = 0.09 @V_GS = 10 V
* Low gate charge ( typical 40 nC)
* Low Crss ( typical 50 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating

FQAF33N10 Parameters

Technical/Catalog Information	FQAF33N10
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	25.8A
Rds On (Max) @ Id, Vgs	52 mOhm @ 12.9A, 10V
Input Capacitance (Ciss) @ Vds	1500pF @ 25V
Power - Max	83W
Packaging	Tube
Gate Charge (Qg) @ Vgs	51nC @ 10V
Package / Case	TO-3PF
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQAF33N10 FQAF33N10

FQAF33N10 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control.

FQAF33N10 Maximum Ratings

Symbol	Parameter	FQAF33N10	Units
V_DSS	Drain-Source Voltage	100	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	25.8	A
I_D		18.2	A
I_DM	Drain Current - Pulsed (Note 1)	103.2	A
V_GSS	Gate-Source Voltage	± 25	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	430	mJ
I_AR	Avalanche Current (Note 1)	25.8	A
E_AR	Repetitive Avalanche Energy (Note 1)	8.3	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	7.0	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	83	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	0.55	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQAF33N10 Features

* 25.8A, 100V, R _DS(on) = 0.052 @V_GS = 10 V
* Low gate charge ( typical 38 nC)
* Low Crss ( typical 62 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating

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