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FQAF33N10L, FQAF34N20, FQAF34N20L

Table of contents:
Info of FQAF33N10L
Info of FQAF34N20
Info of FQAF34N20L

FQAF33N10L, FQAF34N20, FQAF34N20L Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-247F D/C:09+

FQAF33N10L, FQAF34N20, FQAF34N20L Picture

FQAF33N10L, FQAF34N20, FQAF34N20L Datasheet download

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Part Number: FQAF33N10L

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-247F

D/C: 09+

Description: MOSFET N-CH 100V 25.8A TO-3PF

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FQAF33N10L Parameters

Technical/Catalog Information	FQAF33N10L
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	25.8A
Rds On (Max) @ Id, Vgs	52 mOhm @ 12.9A, 10V
Input Capacitance (Ciss) @ Vds	1630pF @ 25V
Power - Max	83W
Packaging	Tube
Gate Charge (Qg) @ Vgs	40nC @ 5V
Package / Case	TO-3PF
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQAF33N10L FQAF33N10L

FQAF33N10L General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.

FQAF33N10L Maximum Ratings

Symbol	Parameter	FQA33N10L	Units
VDSS	Drain-Source Voltage	100	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	25.8	A
ID		18.2	A
IDM	Drain Current - Pulsed (Note 1)	103.2	A
VGSS	Gate-Source Voltage	± 20	V
EAS	Single Pulsed Avalanche Energy (Note 2)	430	mJ
IAR	Avalanche Current (Note 1)	25.8	A
EAR	Repetitive Avalanche Energy (Note 1)	16.3	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	6.0	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	83	W
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	0.56	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQAF33N10L Features

• 25.8A, 100V, RDS(on) = 0.052Ω @VGS = 10 V
• Low gate charge ( typical 30 nC)
• Low Crss ( typical 70 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

FQAF34N20 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild`s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.

FQAF34N20 Maximum Ratings

Symbol	Parameter	FQAF34N20	Units
V_DSS	Drain-Source Voltage	200	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	23	A
I_D		14.5	A
I_DM	Drain Current - Pulsed (Note 1)	92	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	640	mJ
I_AR	Avalanche Current (Note 1)	23	A
E_AR	Repetitive Avalanche Energy (Note 1)	9.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	95	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	0.76	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQAF34N20 Features

* 23A, 200V, R_DS(on) = 0.075 @V_GS = 10 V
* Low gate charge ( typical 60 nC)
* Low Crss ( typical 55 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FQAF34N20L General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild`s proprietary, planar stripe,DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switching for DC/DC conventers,swithch mode supply.motor control.

FQAF34N20L Maximum Ratings

Symbol	Parameter	FQAF34N20L	Units
V_DSS	Drain-Source Voltage	200	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	23	A
I_D		14.5	A
I_DM	Drain Current - Pulsed (Note 1)	92	A
V_GSS	Gate-Source Voltage	± 20	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	640	mJ
I_AR	Avalanche Current (Note 1)	23	A
E_AR	Repetitive Avalanche Energy (Note 1)	9.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	95	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	0.76	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+175
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQAF34N20L Features

* 23A, 200V,, R _DS(on) = 0.075 @V_GS = 10 V
* Low gate charge ( typical 55 nC)
* Low Crss ( typical 52 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating
* Low level gate drive requirement allowing direct
operation from logic drivers

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