MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-3P D/C:07+
FQAF55N10, FQAF58N08, FQAF5N90 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-3P
D/C: 07+
Description: MOSFET N-CH 900V 4.1A TO-3PF
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PDF/DataSheet Download
Datasheet: FQA10N60C
File Size: 646153 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQAF58N08
File Size: 627472 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQAF5N90
File Size: 676392 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FQAF58N08 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25° C | 44A |
| Rds On (Max) @ Id, Vgs | 24 mOhm @ 22A, 10V |
| Input Capacitance (Ciss) @ Vds | 1900pF @ 25V |
| Power - Max | 85W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 65nC @ 10V |
| Package / Case | TO-3PF |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQAF58N08 FQAF58N08 |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
| Symbol | Parameter |
FQAF58N08 |
Units |
| VDSS | Drain-Source Voltage |
80 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
44 |
A |
|
31.1 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
176 |
A |
| VGSS | Gate-Source Voltage |
±25 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
560 |
mJ |
| IAR | Avalanche Current (Note 1) |
44 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
8.5 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
6.5 |
V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
85 |
W |
|
0.57 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
| Technical/Catalog Information | FQAF5N90 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25° C | 4.1A |
| Rds On (Max) @ Id, Vgs | 2.3 Ohm @ 2.05A, 10V |
| Input Capacitance (Ciss) @ Vds | 1550pF @ 25V |
| Power - Max | 90W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 40nC @ 10V |
| Package / Case | TO-3PF |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQAF5N90 FQAF5N90 |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
| Symbol | Parameter |
FQAF5N90 |
Units |
| VDSS | Drain-Source Voltage |
900 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
4.1 |
A |
|
2.6 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
16.4 |
A |
| VGSS | Gate-Source Voltage |
±30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
660 |
mJ |
| IAR | Avalanche Current (Note 1) |
4.1 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
9.0 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.0 |
V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
90 |
W |
|
0.72 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
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