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FQAF65N06, FQAF6N70, FQAF6N80

Table of contents:
Info of FQAF65N06
Info of FQAF6N70
Info of FQAF6N80

FQAF65N06, FQAF6N70, FQAF6N80 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-247F D/C:09+

FQAF65N06, FQAF6N70, FQAF6N80 Datasheet download

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Part Number: FQAF65N06

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-247F

D/C: 09+

Description: MOSFET N-CH 800V 4.4A TO-3PF

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FQAF65N06 Parameters

Technical/Catalog Information	FQAF65N06
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	49A
Rds On (Max) @ Id, Vgs	16 mOhm @ 24.5A, 10V
Input Capacitance (Ciss) @ Vds	2410pF @ 25V
Power - Max	86W
Packaging	Tube
Gate Charge (Qg) @ Vgs	65nC @ 10V
Package / Case	TO-3PF
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQAF65N06 FQAF65N06

FQAF6N70 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

FQAF6N70 Maximum Ratings

Symbol	Parameter	FQAF6N70	Units
V_DSS	Drain-Source Voltage	700	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	4.74	A
I_D		3.0	A
I_DM	Drain Current - Pulsed (Note 1)	19	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	600	mJ
I_AR	Avalanche Current (Note 1)	4.74	A
E_AR	Repetitive Avalanche Energy (Note 1)	8.3	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	83	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	0.87	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQAF6N70 Features

* 4.74A, 700V, R_DS(on) = 1.5 @V_GS = 10 V
* Low gate charge ( typical 30 nC)
* Low Crss ( typical 15 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FQAF6N80 Parameters

Technical/Catalog Information	FQAF6N80
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	4.4A
Rds On (Max) @ Id, Vgs	1.95 Ohm @ 2.2A, 10V
Input Capacitance (Ciss) @ Vds	1500pF @ 25V
Power - Max	90W
Packaging	Tube
Gate Charge (Qg) @ Vgs	31nC @ 10V
Package / Case	TO-3PF
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQAF6N80 FQAF6N80

FQAF6N80 Maximum Ratings

Symbol	Parameter	FQAF6N80	Units
VDSS	Drain-Source Voltage	800	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	4.4	A
ID		2.78	A
IDM	Drain Current - Pulsed (Note 1)	17.6	A
VGSS	Gate-Source Voltage	±30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	680	mJ
IAR	Avalanche Current (Note 1)	4.4	A
EAR	Repetitive Avalanche Energy (Note 1)	9.0	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.0	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	90	W
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	0.72	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQAF6N80 Features

• 4.4A, 800V, RDS(on) = 1.95Ω @VGS = 10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 14 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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