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These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies..
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300
FQAF8N80 Parameters
Technical/Catalog Information
FQAF8N80
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
800V
Current - Continuous Drain (Id) @ 25° C
5.9A
Rds On (Max) @ Id, Vgs
1.2 Ohm @ 2.95A, 10V
Input Capacitance (Ciss) @ Vds
2350pF @ 25V
Power - Max
107W
Packaging
Tube
Gate Charge (Qg) @ Vgs
57nC @ 10V
Package / Case
TO-3PF
FET Feature
Standard
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
FQAF8N80 FQAF8N80
FQAF8N80 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.