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FQAF7N90, FQAF85N06, FQAF8N80

FQAF7N90, FQAF85N06, FQAF8N80 Selling Leads, Datasheet

MFG:Fairchild Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:N/A  D/C:09+

FQAF7N90, FQAF85N06, FQAF8N80 Picture

FQAF7N90, FQAF85N06, FQAF8N80 Datasheet download

Five Points

Part Number: FQAF7N90

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: N/A

D/C: 09+

Description: MOSFET N-CH 800V 5.9A TO-3PF

 

 
 
 
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  • FQA10N60C

  • Pack: TO D/C: 03+& Qty: 300 Note: new &original?  Adddate: 2024-04-29
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  • chenglifa   China
    Contact: Ms.KE   MSN:chenglifa@hotmail.com
    Tel: 86-755-82564760
    Fax: 86-755-82564760
    (53)
  • FQA10N80C

  • Vendor: Fairchild D/C: 07+& Qty: 530 Note: Stock on hand  Adddate: 2024-04-29
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  • SAMT HK CO LTD   Hong
    Contact: Mr.NickLEE  
    Tel: 852--92323009
    Fax: 852--2890 7890
    (0)

About FQAF7N90

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Datasheet: FQAF7N90

File Size: 696407 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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  • FQA10N60C

  • Pack: TO D/C: 03+& Qty: 300 Note: new &original?  Adddate: 2024-04-29
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  • chenglifa   China
    Contact: Ms.KE   MSN:chenglifa@hotmail.com
    Tel: 86-755-82564760
    Fax: 86-755-82564760
    (53)
  • FQA10N80C

  • Vendor: Fairchild D/C: 07+& Qty: 530 Note: Stock on hand  Adddate: 2024-04-29
  • Inquire Now
  • SAMT HK CO LTD   Hong
    Contact: Mr.NickLEE  
    Tel: 852--92323009
    Fax: 852--2890 7890
    (0)

About FQAF85N06

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Datasheet: FQAF85N06

File Size: 668861 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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FQAF8N80 Suppliers

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  • FQA10N60C

  • Pack: TO D/C: 03+& Qty: 300 Note: new &original?  Adddate: 2024-04-29
  • Inquire Now
  • chenglifa   China
    Contact: Ms.KE   MSN:chenglifa@hotmail.com
    Tel: 86-755-82564760
    Fax: 86-755-82564760
    (53)
  • FQA10N80C

  • Vendor: Fairchild D/C: 07+& Qty: 530 Note: Stock on hand  Adddate: 2024-04-29
  • Inquire Now
  • SAMT HK CO LTD   Hong
    Contact: Mr.NickLEE  
    Tel: 852--92323009
    Fax: 852--2890 7890
    (0)

About FQAF8N80

PDF/DataSheet Download

Datasheet: FQAF8N80

File Size: 705555 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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FQAF7N90 Parameters

Technical/Catalog InformationFQAF7N90
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25° C5.2A
Rds On (Max) @ Id, Vgs1.55 Ohm @ 2.6A, 10V
Input Capacitance (Ciss) @ Vds 2280pF @ 25V
Power - Max107W
PackagingTube
Gate Charge (Qg) @ Vgs59nC @ 10V
Package / CaseTO-3PF
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQAF7N90
FQAF7N90

FQAF7N90 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies..

FQAF7N90 Maximum Ratings

Symbol Parameter
FQAF7N90
Units
VDSS Drain-Source Voltage
900
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
5.2
A
3.3
A
IDM Drain Current - Pulsed (Note 1)
20.8
A
VGSS Gate-Source Voltage
±30
V
EAS Single Pulsed Avalanche Energy (Note 2)
830
mJ
IAR Avalanche Current (Note 1)
5.2
A
EAR Repetitive Avalanche Energy (Note 1)
10.7
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
4.0
V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
107
W
0.85
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C

FQAF7N90 Features

• 5.2A, 900V, RDS(on) = 1.55Ω @VGS = 10 V
• Low gate charge ( typical 45 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQAF85N06 General Description

    These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

    This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

FQAF85N06 Features

* 67A, 60V, RDS(on)  = 0.010  @VGS  = 10 V
* Low gate charge ( typical 86 nC)
* Low Crss ( typical  165 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating

FQAF85N06 Connection Diagram

Symbol
Parameter
FQAF85N06
Units
VDSS
Drain-Source Voltage
60
V
ID
Drain Current     - Continuous (TC = 25°C)
                  - Continuous (TC = 100°C)
67
A
47.4
A
IDM
Drain Current - Pulsed             (Note 1)
268
A
VGSS
Gate-Source Voltage
± 25
V
EAS
Single Pulsed Avalanche Energy      (Note 2)
810
mJ
IAR
Avalanche Current                   (Note 1)
67
A
EAR
Repetitive Avalanche Energy         (Note 1)
10
mJ
dv/dt
Peak Diode Recovery dv/dt           (Note 3)
7.0
V/ns
PD
Power Dissipation     (TC = 25°C)
                     - Derate above 25°C
100
W
0.67
W/
TJ,TSTG
Operating and Storage Temperature Range
-55 to+175
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300

FQAF8N80 Parameters

Technical/Catalog InformationFQAF8N80
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C5.9A
Rds On (Max) @ Id, Vgs1.2 Ohm @ 2.95A, 10V
Input Capacitance (Ciss) @ Vds 2350pF @ 25V
Power - Max107W
PackagingTube
Gate Charge (Qg) @ Vgs57nC @ 10V
Package / CaseTO-3PF
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQAF8N80
FQAF8N80

FQAF8N80 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

FQAF8N80 Maximum Ratings

Symbol Parameter
FQAF8N80
Units
VDSS Drain-Source Voltage
800
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
5.9
A
3.7
A
IDM Drain Current - Pulsed (Note 1)
23.6
A
VGSS Gate-Source Voltage
±30
V
EAS Single Pulsed Avalanche Energy (Note 2)
850
mJ
IAR Avalanche Current (Note 1)
5.9
A
EAR Repetitive Avalanche Energy (Note 1)
10.7
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
4.0
V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
107
W
0.85
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C

FQAF8N80 Features

• 5.9A, 800V, RDS(on) = 1.2Ω @VGS = 10 V
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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