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FQAF90N08, FQAF9N50, FQAF9N90

Table of contents:
Info of FQAF90N08
Info of FQAF9N50
Info of FQAF9N90

FQAF90N08, FQAF9N50, FQAF9N90 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-247F D/C:09+

FQAF90N08, FQAF9N50, FQAF9N90 Datasheet download

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Part Number: FQAF90N08

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-247F

D/C: 09+

Description: MOSFET N-CH 500V 7.2A TO-3P

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FQAF90N08 Parameters

Technical/Catalog Information	FQAF90N08
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25° C	56A
Rds On (Max) @ Id, Vgs	16 mOhm @ 28A, 10V
Input Capacitance (Ciss) @ Vds	3250pF @ 25V
Power - Max	100W
Packaging	Tube
Gate Charge (Qg) @ Vgs	110nC @ 10V
Package / Case	TO-3PF
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQAF90N08 FQAF90N08

FQAF90N08 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.

FQAF90N08 Maximum Ratings

Symbol	Parameter	FQAF90N08	Units
VDSS	Drain-Source Voltage	80	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	56	A
ID		39.6	A
IDM	Drain Current - Pulsed (Note 1)	224	A
VGSS	Gate-Source Voltage	±25	V
EAS	Single Pulsed Avalanche Energy (Note 2)	1360	mJ
IAR	Avalanche Current (Note 1)	56	A
EAR	Repetitive Avalanche Energy (Note 1)	10	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	6.5	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	100	W
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	0.67	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQAF90N08 Features

• 56A, 80V, RDS(on) = 0.016Ω @VGS = 10 V
• Low gate charge ( typical 84 nC)
• Low Crss ( typical 200 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

FQAF9N50 Parameters

Technical/Catalog Information	FQAF9N50
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	7.2A
Rds On (Max) @ Id, Vgs	730 mOhm @ 3.6A, 10V
Input Capacitance (Ciss) @ Vds	1450pF @ 25V
Power - Max	90W
Packaging	Tube
Gate Charge (Qg) @ Vgs	36nC @ 10V
Package / Case	TO-3PF
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQAF9N50 FQAF9N50

FQAF9N50 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild`s proprietary,planar stripe,DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.

FQAF9N50 Maximum Ratings

Symbol	Parameter	FQAF9N50	Units
V_DSS	Drain-Source Voltage	500	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	7.2	A
I_D		4.6	A
I_DM	Drain Current - Pulsed (Note 1)	29	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	360	mJ
I_AR	Avalanche Current (Note 1)	7.2	A
E_AR	Repetitive Avalanche Energy (Note 1)	9.0	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	90	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	0.72	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to+150
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

FQAF9N50 Features

* 7.2A, 500V, R_DS(on) = 0.73 @V_GS = 10 V
* Low gate charge ( typical 28 nC)
* Low Crss ( typical 20 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FQAF9N90 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

FQAF9N90 Maximum Ratings

Symbol	Parameter	FQAF9N90	Units
VDSS	Drain-Source Voltage	900	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	5.9	A
ID		3.73	A
IDM	Drain Current - Pulsed (Note 1)	23.6	A
VGSS	Gate-Source Voltage	±30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	900	mJ
IAR	Avalanche Current (Note 1)	5.9	A
EAR	Repetitive Avalanche Energy (Note 1)	11.3	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.0	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	113	W
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	0.91	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQAF9N90 Features

• 5.9A, 900V, RDS(on) = 1.3Ω @VGS = 10 V
• Low gate charge ( typical 55 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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