FQB2P25, FQB2P40, FQB30N06 Selling Leads, Datasheet
MFG:FAIRC Package Cooled:. D/C:06+
FQB2P25, FQB2P40, FQB30N06 Datasheet download
Part Number: FQB2P25
MFG: FAIRC
Package Cooled: .
D/C: 06+
FQB2P25, FQB2P40, FQB30N06
- Table of contents:
Info of FQB2P25
Info of FQB2P40
Info of FQB30N06
Attentive hint
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
Top Sellers:
TOP
About FQB2P25
PDF/DataSheet Download
Datasheet: FQB2P25
File Size: 573107 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQB2P40
PDF/DataSheet Download
Datasheet: FQB2P40
File Size: 600665 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQB30N06
PDF/DataSheet Download
Datasheet: FQB30N06
File Size: 679267 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQB2P25 General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.
FQB2P25 Maximum Ratings
| Symbol | Parameter |
FQB2P25 / FQI2P25 |
Units |
| VDSS | Drain-Source Voltage |
-250 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
-2.3 |
A |
|
-1.45 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
-9.2 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
120 |
mJ |
| IAR | Avalanche Current (Note 1) |
-2.3 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
5.2 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
-5.5 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
52 |
W | |
|
0.42 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQB2P25 Features
• -2.3A, -250V, RDS(on) = 4.0Ω @VGS = -10 V
• Low gate charge ( typical 6.5 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 6.5 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQB2P40 General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for electronic lamp ballasts based on the complementary half bridge topology.
FQB2P40 Maximum Ratings
| Symbol | Parameter |
FQB2P40 / FQI2P40 |
Units |
| VDSS | Drain-Source Voltage |
-400 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
-2.0 |
A |
|
-1.27 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
-8.0 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
120 |
mJ |
| IAR | Avalanche Current (Note 1) |
-2.0 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
6.3 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
-4.5 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
63 |
W | |
|
0.51 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQB2P40 Features
• -2.0A, -400V, RDS(on) = 6.5Ω @VGS = -10 V
• Low gate charge ( typical 10 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 10 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQB30N06 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
FQB30N06 Maximum Ratings
| Symbol | Parameter |
FQB30N06 / FQI30N06 |
Units |
| VDSS | Drain-Source Voltage |
60 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
30 |
A |
|
21.3 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
120 |
A |
| VGSS | Gate-Source Voltage |
±25 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
280 |
mJ |
| IAR | Avalanche Current (Note 1) |
30 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
7.9 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
7.0 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
79 |
W | |
|
0.53 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQB30N06 Features
• 30A, 60V, RDS(on) = 0.04Ω @VGS = 10 V
• Low gate charge ( typical 19 nC)
• Low Crss ( typical 40 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low gate charge ( typical 19 nC)
• Low Crss ( typical 40 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
MT58L64L18CT-10
Price: 4-6 USD
MT58L64L18CT-10 TQFP100
DL-7140-211M
Price: 5-6.5 USD
DL-7140-211M laser tube
74LVC74APG
Price: 4-5 USD
74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2
Price: 6.5-8 USD
CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX
Price: 0.284-0.286 USD
PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2
Price: 1-2 USD
IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB
Price: 1-2 USD
a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1
Price: 0.124-0.2 USD
PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L
Price: 0.177-0.178 USD
RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A
Price: 0.053-0.055 USD
STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013
Price: 1.45-1.5 USD
STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B
Price: 0.073-0.075 USD
SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components
