MFG:TO-263(D2PAK) Package Cooled:7850 D/C:FAIRCHILD
MFG: TO-263(D2PAK)
Package Cooled: 7850
D/C: FAIRCHILD
Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.
| Parameter | Parameter | Value | Units |
| VDSS | Drain-Source Voltage | 600 | V |
| ID | Drain Current- Continuous (TC = 25°C) | 6.26 | A |
| - Continuous (TC = 25°C) | 3.96 | A | |
| IDM | Drain Current - Pulsed (Note 1) | 25 | A |
| PD | Power Dissipation (TC = 25°C) | 147 | W |
| - Derate above 25°C | 1.18 | W/ | |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 160 | mJ |
| VGSS | Gate-Source Voltage | ± 30 | V |
| IAR | Avalanche Current (Note 1) | 6.26 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 14.7 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 4.5 | V/ns |
| Tj, Tstg | Operating Junction Temperature Range | -55 to +150 | |
| TL | Storage Temperature Range | 300 |
FQB8N60CFTM
PDF/DataSheet Download
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