MFG:FAIRC Package Cooled:TO-263(D2PAK) D/C:09+
MFG: FAIRC
Package Cooled: TO-263(D2PAK)
D/C: 09+
Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply.
| Symbol | Parameter |
FQB8N25 / FQI8N25 |
Units |
| VDSS | Drain-Source Voltage |
250 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
8.0 |
A |
|
5.0 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
32 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
120 |
mJ |
| IAR | Avalanche Current (Note 1) |
8.0 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
8.7 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
87 |
W | |
|
0.69 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQB8N25
PDF/DataSheet Download
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