FQB6N40, FQB6N40C, FQB6N40CF Selling Leads, Datasheet
MFG:Fairchild Package Cooled:N/A D/C:TO
FQB6N40, FQB6N40C, FQB6N40CF Datasheet download
Part Number: FQB6N40
MFG: Fairchild
Package Cooled: N/A
D/C: TO
FQB6N40, FQB6N40C, FQB6N40CF
- Table of contents:
Info of FQB6N40
Info of FQB6N40C
Info of FQB6N40CF
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About FQB6N40
PDF/DataSheet Download
Datasheet: FQB6N40
File Size: 779313 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQB6N40C
PDF/DataSheet Download
Datasheet: FQB6N40C
File Size: 679067 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQB10N20
PDF/DataSheet Download
Datasheet: FQB10N20
File Size: 813186 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQB6N40C General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.
FQB6N40C Maximum Ratings
| Symbol | Parameter |
FQB6N40C/FQI6N40C |
Units |
| VDSS | Drain-Source Voltage |
400 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
6 |
A |
|
3.6 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
24 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
270 |
mJ |
| IAR | Avalanche Current (Note 1) |
6 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
7.3 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
73 |
W |
|
0.58 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQB6N40C Features
• 6A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V
• Low gate charge ( typical 16nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 16nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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