Position: Home > DataSheet > Index F > FQB Series > FQB6N60, FQB6N60C, FQB6N60TM

Low Cost Custom Prototype PCB Manufacturer

FQB6N60, FQB6N60C, FQB6N60TM

Table of contents:
Info of FQB6N60
Info of FQB6N60C
Info of FQB6N60TM

FQB6N60, FQB6N60C, FQB6N60TM Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:06+

FQB6N60, FQB6N60C, FQB6N60TM Datasheet download

Five Points

Part Number: FQB6N60

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: .

D/C: 06+

Description: MOSFET N-CH 600V 6.2A D2PAK

Attentive hint

Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.

How to buy ?

How long will receive a response.

Top Sellers:

TOP

FQB6N60 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

FQB6N60 Maximum Ratings

Symbol	Parameter	FQB6N60 / FQI6N60	Units
VDSS	Drain-Source Voltage	600	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	6.2	A
ID		3.9	A
IDM	Drain Current - Pulsed (Note 1)	24.8	A
VGSS	Gate-Source Voltage	±30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	440	mJ
IAR	Avalanche Current (Note 1)	6.2	A
EAR	Repetitive Avalanche Energy (Note 1)	13	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
PD	Power Dissipation (TA = 25°C) *	3.13	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	130	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	1.04	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQB6N60 Features

• 6.2A, 600V, RDS(on) = 1.5Ω @VGS = 10 V
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQB6N60C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

FQB6N60C Maximum Ratings

Symbol	Parameter	FQB6N60C / FQI6N60C	Units
VDSS	Drain-Source Voltage	5.5 5.5 *	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	3.3 3.3*	A
ID		22 22 *	A
IDM	Drain Current - Pulsed (Note 1)	24.8	A
VGSS	Gate-Source Voltage	±30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	440	mJ
IAR	Avalanche Current (Note 1)	5.5	A
EAR	Repetitive Avalanche Energy (Note 1)	13	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	12.5	V/ns
PD	Power Dissipation (TA = 25°C) *	4.5	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	125	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	1.0	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQB6N60C Features

· 5.5A, 600V, RDS(on) = 2.0Ω @VGS = 10 V
· Low gate charge ( typical 16 nC)
· Low Crss ( typical 7 pF)
· Fast switching
· 100% avalanche tested
· Improved dv/dt capability

FQB6N60TM Parameters

Technical/Catalog Information	FQB6N60TM
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	6.2A
Rds On (Max) @ Id, Vgs	1.5 Ohm @ 3.1A, 10V
Input Capacitance (Ciss) @ Vds	1000pF @ 25V
Power - Max	3.13W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	25nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQB6N60TM FQB6N60TM

Hotspot Suppliers Product

Product List A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9

MT58L64L18CT-10

Price: 4-6 USD

MT58L64L18CT-10 TQFP100
DL-7140-211M

Price: 5-6.5 USD

DL-7140-211M laser tube
74LVC74APG

Price: 4-5 USD

74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2

Price: 6.5-8 USD

CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX

Price: 0.284-0.286 USD

PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2

Price: 1-2 USD

IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB

Price: 1-2 USD

a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1

Price: 0.124-0.2 USD

PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L

Price: 0.177-0.178 USD

RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A

Price: 0.053-0.055 USD

STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013

Price: 1.45-1.5 USD

STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B

Price: 0.073-0.075 USD

SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components