FQB95N03LTM, FQB9N08, FQB9N08L Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:. D/C:06+
FQB95N03LTM, FQB9N08, FQB9N08L Datasheet download
Part Number: FQB95N03LTM
MFG: FAIRCHILD
Package Cooled: .
D/C: 06+
MFG:FAIRCHILD Package Cooled:. D/C:06+
FQB95N03LTM, FQB9N08, FQB9N08L Datasheet download
MFG: FAIRCHILD
Package Cooled: .
D/C: 06+
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Datasheet: FQB10N20
File Size: 813186 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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PDF/DataSheet Download
Datasheet: FQB9N08
File Size: 560237 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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PDF/DataSheet Download
Datasheet: FQB9N08L
File Size: 626970 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
Symbol | Parameter |
FQB9N08 / FQI9N08 |
Units |
VDSS | Drain-Source Voltage |
80 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
9.3 |
A |
6.57 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
37.2 |
A |
VGSS | Gate-Source Voltage |
± 25 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
55 |
mJ |
IAR | Avalanche Current (Note 1) |
9.3 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
4.0 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
6.5 |
V/ns |
PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
40 |
W | |
0.27 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motorcontrol.
Symbol | Parameter |
FQB9N08L / FQI9N08L |
Units |
VDSS | Drain-Source Voltage |
80 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
9.3 |
A |
6.57 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
37.2 |
A |
VGSS | Gate-Source Voltage |
±20 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
55 |
mJ |
IAR | Avalanche Current (Note 1) |
9.3 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
4.0 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
6.5 |
V/ns |
PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
40 |
W | |
0.27 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |