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FQD3P50TM, FQD45N03L, FQD4N20

Table of contents:
Info of FQD3P50TM
Info of FQD45N03L
Info of FQD4N20

FQD3P50TM, FQD45N03L, FQD4N20 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:252 D/C:04/DC

FQD3P50TM, FQD45N03L, FQD4N20 Datasheet download

Five Points

Part Number: FQD3P50TM

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: 252

D/C: 04/DC

Description: MOSFET P-CH 500V 2.1A DPAK

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FQD3P50TM Parameters

Technical/Catalog Information	FQD3P50TM
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	2.1A
Rds On (Max) @ Id, Vgs	4.9 Ohm @ 1.05A, 10V
Input Capacitance (Ciss) @ Vds	660pF @ 25V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	23nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQD3P50TM FQD3P50TM

FQD45N03L General Description

This device employs a new advanced MOSFET technology and features low gate charge while maintaining low on- resistance.

Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.

FQD45N03L Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain to Source Voltage	30	V
V_GS	Gate to Source Voltage	±20	V
I_D	Drain Current Continuous (T_C = 25, V_GS= 10V) Continuous (T_C = 100, V_GS = 4.5V) Continuous (T_C= 25, V_GS = 10V, R_JA= 52/W) Pulsed	20	A
		20	A
		8	A
		±20	A
P_D	Power dissipation Derate above 25	41 0.33	W W/
T_J, T_STG	Operating and Storage Temperature	-55 to 150

FQD45N03L Features

• Fast switching
•rDS(ON) = 0.018Ω (Typ), V_GS = 10V
•rDS(ON) = 0.028Ω (Typ), V_GS = 5V
•Q_g(Typ) = 9nC, V_GS= 5V
•Q_gd (Typ) =3nC
•C_ISS (Typ) =970pF

FQD45N03L Typical Application

• DC/DC converters

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