FQD7N30

The FQD7N30 is a 300V N-Channel MOSFET.These N-Channel enhancement mode power field effect transistors  are  produced  using  Fairchild's  proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply.

Features of the FQD7N30 are:(1)5.5A, 300V, Rds(on)=0.7 @Vgs=10V; (2)low gate charge(typical 13 nC); (3)low crss(typical 12 pF); (4)fast switching; (5)100% avalanche tested; (6)improved dv/dt capability.This datasheet contains preliminary data, and supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

The absolute maximum ratings of the FQD7N30 can be summarized as:(1)drain-source voltage:300 V;(2)storage temperature range:-55 to 150;(3)drain current:22A;(4)operating junction temperature:-55 to 150;(5)power dissipation:2.5W;(6)gate-source voltage:±30V.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s).In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement.In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.