Features: • Fast switching• rDS(ON)= 0.014Ω (Typ), VGS = 10V• rDS(ON)= 0.024Ω (Typ), VGS = 4.5V• Qg (Typ) = 9.6nC, VGS = 5V• Qgd (Typ) = 3.4nC• CISS (Typ) = 900pFApplication• DC/DC convertersSpecifications Symbol Parameter Ratings ...
FQD60N03L: Features: • Fast switching• rDS(ON)= 0.014Ω (Typ), VGS = 10V• rDS(ON)= 0.024Ω (Typ), VGS = 4.5V• Qg (Typ) = 9.6nC, VGS = 5V• Qgd (Typ) = 3.4nC• CISS (...
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Symbol |
Parameter |
Ratings |
Units |
VDSS | Drain to Source Voltage | 30 | V |
VGS | Gate to Source Voltage | ±20 | V |
ID | Drain Current Continuous (TC = 25, VGS = 10V) Continuous (TC = 100, VGS = 4.5V) Continuous (TC = 25, VGS = 10V, RJA= 52/W) Pulsed |
30 | A |
19 | A | ||
7.9 | A | ||
±20 | A | ||
PD | Power dissipation Derate above 25 |
45 0.37 |
W W/ |
TJ, TSTG | Operating and Storage Temperature | -55 to 150 |
FQD60N03L employs advanced MOSFET technology and features low gate charge while maintaining low on resistance.
Optimized for switching applications, FQD60N03L improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.