MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:09+
FQG4904, FQH18N50U2, FQH8N100C Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: N/A
D/C: 09+
Description: MOSFET N-CH 1000V 8A TO-247
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PDF/DataSheet Download
Datasheet: FQG4904
File Size: 1185963 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQH140N10
File Size: 696289 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQH140N10
File Size: 696289 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on half bridge.
| Symbol | Parameter | N-Channel | P-Channel | Units |
| VDSS | Drain-Source Voltage | 400 | -400 | V |
| ID | Drain Current - Continuous (TA = 25) - Continuous (TA = 100) |
0.46 | -0.46 | A |
| 0.29 | -0.29 | A | ||
| IDM | Drain Curent - Pulsed (Note 1) | 3.68 | -3.68 | A |
| VGSS | Gate-Source Voltage | ± 30 | V | |
| dv/dt | Peak Diode Recovery dv/dt (Note 2) | 4.5 | -4.5 | V/ns |
| PD | Power Dissipation (TA = 25) - Derate above 25 |
1.6 | W | |
| 0.013 | W/ | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | ||
| Technical/Catalog Information | FQH8N100C |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25° C | 8A |
| Rds On (Max) @ Id, Vgs | 1.45 Ohm @ 4A, 10V |
| Input Capacitance (Ciss) @ Vds | 3220pF @ 25V |
| Power - Max | 225W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 70nC @ 10V |
| Package / Case | TO-247 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQH8N100C FQH8N100C |
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