FZE1066G, FZE1658G, FZE1685G Selling Leads, Datasheet
MFG:Infineon Package Cooled:SOP20 D/C:03/04+
FZE1066G, FZE1658G, FZE1685G Datasheet download
Part Number: FZE1066G
MFG: Infineon
Package Cooled: SOP20
D/C: 03/04+
MFG:Infineon Package Cooled:SOP20 D/C:03/04+
FZE1066G, FZE1658G, FZE1685G Datasheet download
MFG: Infineon
Package Cooled: SOP20
D/C: 03/04+
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PDF/DataSheet Download
Datasheet: FZE1658G
File Size: 416213 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FZE1658G
File Size: 416213 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FZE1658G
File Size: 416213 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
The Integrated circuit FZE 1658G is used to detect the signal states of eight independent input lines according to IEC 65A Type 2 (e.g. two-wire proximity switches) with a common ground (GND). For operation in accordance with IEC 65A, it is necessary for the device to be wired with resistors rated RV = 820 and REXT = 4.4 k with ± 2 % tolerance and 200 ppm TK. The input device has the following characteristics:
Parameter | Symbol | Limit Values | Unit | Notes | |
min. | max. | ||||
Transient input current inputs I0 - I7 |
II | 0.6 | 0.6 | A | t50 % 50 s |
1.2 | 1.2 | A | t50 % 1.2 s | ||
2.5 | 2.5 | A | t50 % 50 ns | ||
Ground current | IGND | 5 | 5 | A | t50 % 50 s |
- 10 | 10 | A | t50 % 50 ns | ||
Junction temperature | Tj | 40 | 150 | °C | |
Storage temperature | TS | 50 | 125 | °C | |
Thermal resistance System/air |
Rthja | 95 | K/W | soldered-in | |
Transient thermal resistance; Same current through all inputs I0 - I7 |
Zth | 0.15 | K/W | 50 s pulse | |
Zth | K/W | 120 s pulse | |||
Supply voltage | VS | 0.3 | 65 | V | |
Ground offset DGND to GND | VDGND | 4 | 4 | V | VDGND < VS |
Current at the LED outputs | IL | 15 | 15 | mA | |
500 | 500 | mA | t50 % 50 s | ||
250 | 250 | mA | t50 % 1.2 s | ||
125 | 125 | mA | t50 % 50 s | ||
Voltage at T, LO-N, SO-N, SE-N |
VLOG | 4 | 9 | V | |
0.3 | 9 | V | referred to DGND | ||
Capacitance at CT | CCT | 2 | F | when VS falls below VCT | |
ESD voltage 100 pF / 1.5 k | VESD | 1000 | 1000 | V | MIL Std. 883 Meth. 3015 |