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GBIT0803C, GBJ10005, GBJ1001

GBIT0803C, GBJ10005, GBJ1001 Selling Leads, Datasheet

MFG:Diodes Inc  Category:Discrete Semiconductor Products  Package Cooled:2004+  D/C:221

GBJ10005 Picture

GBIT0803C, GBJ10005, GBJ1001 Datasheet download

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Part Number: GBJ10005

Category: Discrete Semiconductor Products

MFG: Diodes Inc

Package Cooled: 2004+

D/C: 221

Description: RECT BRIDGE GPP 100V 10A GBJ

 

 
 
 
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GBIT0803C Suppliers

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  • GBIT0818C

  • Vendor: Microsemi Pack: SO Qty: 2801 Note: stock on hand  Adddate: 2024-04-19
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  • TCW(HK) electronic limited   China
    Contact: Mr.David   MSN:hongjijia@hotmail.com
    Tel: 86-0755-82817106
    Fax: 86-0755-83012739
    (3)

About GBIT0803C

PDF/DataSheet Download

Datasheet: GBIT0803C

File Size: 184176 KB

Manufacturer: MICROSEMI [Microsemi Corporation]

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GBJ10005 Suppliers

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  • GBJ1004

  • Vendor: TSC D/C: 07+& Qty: 10000 Note: NEW  Adddate: 2024-04-19
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  • AX TECHNOLOGY CO.,LTD   China
    Contact: Ms.carolli   MSN:kathy888@hotmail.com
    Tel: 86-10-80771576
    Fax: 86-10-62313914
    (12)
  • GBJ1004G

  • Vendor: TSC D/C: 07+& Qty: 10000 Note: NEW  Adddate: 2024-04-19
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  • AX TECHNOLOGY CO.,LTD   China
    Contact: Ms.carolli   MSN:kathy888@hotmail.com
    Tel: 86-10-80771576
    Fax: 86-10-62313914
    (12)
  • GBJ1005

  • Vendor: TSC D/C: 07+& Qty: 10000 Note: NEW  Adddate: 2024-04-19
  • Inquire Now
  • AX TECHNOLOGY CO.,LTD   China
    Contact: Ms.carolli   MSN:kathy888@hotmail.com
    Tel: 86-10-80771576
    Fax: 86-10-62313914
    (12)
  • GBJ1005G

  • Vendor: TSC D/C: 07+& Qty: 10000 Note: NEW  Adddate: 2024-04-19
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  • AX TECHNOLOGY CO.,LTD   China
    Contact: Ms.carolli   MSN:kathy888@hotmail.com
    Tel: 86-10-80771576
    Fax: 86-10-62313914
    (12)
  • GBJ1006

  • Vendor: TSC D/C: 07+& Qty: 10000 Note: NEW  Adddate: 2024-04-19
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  • AX TECHNOLOGY CO.,LTD   China
    Contact: Ms.carolli   MSN:kathy888@hotmail.com
    Tel: 86-10-80771576
    Fax: 86-10-62313914
    (12)

About GBJ10005

PDF/DataSheet Download

Datasheet: GBJ10005

File Size: 91267 KB

Manufacturer: MCC [Micro Commercial Components]

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GBJ1001 Suppliers

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  • GBJ1004

  • Vendor: TSC D/C: 07+& Qty: 10000 Note: NEW  Adddate: 2024-04-19
  • Inquire Now
  • AX TECHNOLOGY CO.,LTD   China
    Contact: Ms.carolli   MSN:kathy888@hotmail.com
    Tel: 86-10-80771576
    Fax: 86-10-62313914
    (12)
  • GBJ1004G

  • Vendor: TSC D/C: 07+& Qty: 10000 Note: NEW  Adddate: 2024-04-19
  • Inquire Now
  • AX TECHNOLOGY CO.,LTD   China
    Contact: Ms.carolli   MSN:kathy888@hotmail.com
    Tel: 86-10-80771576
    Fax: 86-10-62313914
    (12)
  • GBJ1005

  • Vendor: TSC D/C: 07+& Qty: 10000 Note: NEW  Adddate: 2024-04-19
  • Inquire Now
  • AX TECHNOLOGY CO.,LTD   China
    Contact: Ms.carolli   MSN:kathy888@hotmail.com
    Tel: 86-10-80771576
    Fax: 86-10-62313914
    (12)
  • GBJ1005G

  • Vendor: TSC D/C: 07+& Qty: 10000 Note: NEW  Adddate: 2024-04-19
  • Inquire Now
  • AX TECHNOLOGY CO.,LTD   China
    Contact: Ms.carolli   MSN:kathy888@hotmail.com
    Tel: 86-10-80771576
    Fax: 86-10-62313914
    (12)

About GBJ1001

PDF/DataSheet Download

Datasheet: GBJ1001

File Size: 91267 KB

Manufacturer: MCC [Micro Commercial Components]

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GBIT0803C General Description

This TRANSIENT VOLTAGE SUPPRESSOR (TVS) array is packaged in an SO-8 configuration giving protection to 2 Bidirectional data or interface lines. It is designed for use in applications where protection is required at the board level from voltage transients caused by electrostatic discharge (ESD) as defined in IEC 1000-4-2, electrical fast transients (EFT) per IEC 1000-4-4 and effects of secondary lighting.

These TVS arrays have a peak power rating of 500 watts for an 8/20msec pulse. This array is suitable for protection of sensitive circuitry consisting of TTL, CMOS DRAM's, SRAM's, HCMOS, HSIC microprocessors, GIGABIT (1000Mbs/sec) transceiver chip sets. The GBIT08XXC product provides board level protection from static electricity and other induced voltage surges that can damage or upset sensitive circuitry without impeding data transmission speeds.

GBIT0803C Maximum Ratings

Operating Temperatures .................... -550C to +150 
Storage Temperature...................... -550C to +150 
Peak Pulse Power  ...............500 Watts (8/20 msec, Figure 1) 
Pulse Repetition Rate........................... <.01%

GBIT0803C Features

·Protects up to 2 Bidirectional lines
·Surge protection Per IEC 1000-4-2, IEC 1000-4-4
· Designed for IEEE 802.3ab Gigabit Ethernet protection
· Provides electrically isolated protection
· SO-8 Packaging
· ULTRA LOW CAPACITANCE 5 pF per line pair
· ULTRA LOW LEAKAGE

GBJ10005 Parameters

Technical/Catalog InformationGBJ10005
VendorDiodes Inc
CategoryDiscrete Semiconductor Products
Diode Type Single Phase
Package / CaseGBJ
PackagingTube
Reverse Recovery Time (trr)-
SpeedStandard Recovery >500ns, > 200mA (Io)
Current - DC Forward (If)10A
Voltage - Peak Reverse (Max)50V
Mounting TypeThrough Hole
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names GBJ10005
GBJ10005
GBJ10005DI ND
GBJ10005DIND
GBJ10005DI

GBJ10005 Maximum Ratings

Operating Temperature.............. -55°C to +150°C
Storage Temperature............... -55°C to +150°C

GBJ10005 Features

·Rating to 1000V PRV
·Ideal for printed circuit board
·Low forward voltage drop, high current capability.
·Reliable low cost construction utilizing molded plastic
·technique results in inexpensive product

GBJ1001 Parameters

Technical/Catalog InformationGBJ1001
VendorDiodes Inc
CategoryDiscrete Semiconductor Products
Diode Type Single Phase
Package / CaseGBJ
PackagingTube
Reverse Recovery Time (trr)-
SpeedStandard Recovery >500ns, > 200mA (Io)
Current - DC Forward (If)10A
Voltage - Peak Reverse (Max)100V
Mounting TypeThrough Hole
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names GBJ1001
GBJ1001
GBJ1001DI ND
GBJ1001DIND
GBJ1001DI

GBJ1001 Maximum Ratings

Part Number GBJ1001
Total Capacitance CT (pF) 55
Max Average Rectified Current IO (A) 10
Peak Repetitive Reverse Voltage VRRM (V) 100
Peak Forward Surge Current IFSM (A) 170
Forward Voltage Drop VF (V) 1.05
Max Reverse Current IR (µA) 10

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