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HGT1S14N36G3VL, HGT1S14N36G3VLS, HGT1S14N36G3VLT

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MFG:Fairchild Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:TO-263  D/C:TO

HGT1S14N36G3VL, HGT1S14N36G3VLS, HGT1S14N36G3VLT Picture

HGT1S14N36G3VL, HGT1S14N36G3VLS, HGT1S14N36G3VLT Datasheet download

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Part Number: HGT1S14N36G3VL

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-263

D/C: TO

Description: IGBT ESD N-CHAN 380V TO-220AB

 

 
 
 
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About HGT1S14N36G3VL

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Datasheet: HGT1S14N36G3VL

File Size: 113316 KB

Manufacturer: INTERSIL [Intersil Corporation]

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  • HGT1S3N60

  • Vendor: Fairchild D/C: 06+& Qty: TO263  Adddate: 2024-04-29
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  • RUIFENG   China
    Contact: Ms.Miss Lin  
    Tel: 086-0755-23815723
    Fax: 086-0755-23815723
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About HGT1S14N36G3VLS

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Datasheet: HGT1S14N36G3VLS

File Size: 229466 KB

Manufacturer: INTERSIL [Intersil Corporation]

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About HGT1N30N60A4D

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Datasheet: HGT1N30N60A4D

File Size: 147560 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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HGT1S14N36G3VL General Description

This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit.

HGT1S14N36G3VL Maximum Ratings

Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCER 390 V
Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS 24 V
Collector Current Continuous at VGE = 5V, TC = +25. . . . . . . . . . . . . . . . . . . .  IC25 18 A
Collector Current Continuous at VGE = 5V, TC = +100. . . . . . . . . . . . . . . . . . .IC100 14 A
Gate-Emitter Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±10 V
Inductive Switching Current at L = 2.3mH, TC = +25 . . . . . . . . . . . . . . . . . . . ISCIS 17 A
Inductive Switching Current at L = 2.3mH, TC = + 175 . . . . . . . . . . . . . . . . . .ISCIS 12 A
Collector to Emitter Avalanche Energy at L = 2.3mH, TC = +25. . . . . . . . . . . EAS 332 mJ
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 100 W
Power Dissipation Derating TC > +25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.67 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . TJ, TSTG -40 to +175
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL 260
Electrostatic Voltage at 100pF, 1500Ω. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD 6 KV

HGT1S14N36G3VL Features

• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• TJ = 175
• Ignition Energy Capable

HGT1S14N36G3VL Connection Diagram

HGT1S14N36G3VLS General Description

This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit.

HGT1S14N36G3VLS Maximum Ratings

Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCER 390 V
Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS 24 V
Collector Current Continuous at VGE = 5V, TC = +25. . . . . . . . . . . . . . . . . . . .  IC25 18 A
Collector Current Continuous at VGE = 5V, TC = +100. . . . . . . . . . . . . . . . . . .IC100 14 A
Gate-Emitter Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±10 V
Inductive Switching Current at L = 2.3mH, TC = +25 . . . . . . . . . . . . . . . . . . . ISCIS 17 A
Inductive Switching Current at L = 2.3mH, TC = + 175 . . . . . . . . . . . . . . . . . .ISCIS 12 A
Collector to Emitter Avalanche Energy at L = 2.3mH, TC = +25. . . . . . . . . . . EAS 332 mJ
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 100 W
Power Dissipation Derating TC > +25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.67 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . TJ, TSTG -40 to +175
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL 260
Electrostatic Voltage at 100pF, 1500Ω. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD 6 KV

HGT1S14N36G3VLS Features

• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• TJ = 175
• Ignition Energy Capable

HGT1S14N36G3VLS Connection Diagram

HGT1S14N36G3VLT Parameters

Technical/Catalog InformationHGT1S14N36G3VLT
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeLogic
Voltage - Collector Emitter Breakdown (Max)390V
Current - Collector (Ic) (Max)18A
Vce(on) (Max) @ Vge, Ic2.2V @ 5V, 14A
Power - Max100W
Mounting TypeThrough Hole
Package / CaseTO-262AA
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HGT1S14N36G3VLT
HGT1S14N36G3VLT

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