HGT1S12N60A4DS

IGBT Transistors 12A 600V N-Ch

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SeekIC No. : 00143309 Detail

HGT1S12N60A4DS: IGBT Transistors 12A 600V N-Ch

floor Price/Ceiling Price

US $ 1.04~1.52 / Piece | Get Latest Price
Part Number:
HGT1S12N60A4DS
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~200
  • 200~250
  • 250~500
  • 500~1000
  • Unit Price
  • $1.52
  • $1.37
  • $1.11
  • $1.04
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.7 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 54 A Gate-Emitter Leakage Current : +/- 250 nA
Power Dissipation : 167 W Maximum Operating Temperature : + 150 C
Package / Case : TO-263AB-3 Packaging : Tube    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Power Dissipation : 167 W
Gate-Emitter Leakage Current : +/- 250 nA
Collector-Emitter Saturation Voltage : 2.7 V
Package / Case : TO-263AB-3
Continuous Collector Current at 25 C : 54 A


Features:

• >100kHz Operation  . . . . . . . . . . . . . . . . . . . . .  390V, 12A
• 200kHz Operation  . . . . . . . . . . . . . . . . . . . . . . .  390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC
• Low Conduction Loss
• Temperature Compensating SABER™ Model
www.intersil.com
• Related Literature
   - TB334 "Guidelines for Soldering Surface Mount
   Components to PC Boards



Specifications

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg



Parameters:

Technical/Catalog InformationHGT1S12N60A4DS
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)54A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 12A
Power - Max167W
Mounting TypeSurface Mount
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
Packaging-
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HGT1S12N60A4DS
HGT1S12N60A4DS



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