IGBT Transistors 12A 600V N-Ch
HGT1S12N60A4DS: IGBT Transistors 12A 600V N-Ch
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| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
| Collector-Emitter Saturation Voltage : | 2.7 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
| Continuous Collector Current at 25 C : | 54 A | Gate-Emitter Leakage Current : | +/- 250 nA | ||
| Power Dissipation : | 167 W | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | TO-263AB-3 | Packaging : | Tube |
| Technical/Catalog Information | HGT1S12N60A4DS |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 54A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 12A |
| Power - Max | 167W |
| Mounting Type | Surface Mount |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| Packaging | - |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | HGT1S12N60A4DS HGT1S12N60A4DS |