HGT1Y40N60B3D, HGT1Y40N60C3D, HGT30N60 Selling Leads, Datasheet
MFG:KA/INF Package Cooled:FSC/INF D/C:07+
HGT1Y40N60B3D, HGT1Y40N60C3D, HGT30N60 Datasheet download
Part Number: HGT1Y40N60B3D
MFG: KA/INF
Package Cooled: FSC/INF
D/C: 07+
HGT1Y40N60B3D, HGT1Y40N60C3D, HGT30N60
- Table of contents:
Info of HGT1Y40N60B3D
Info of HGT1Y40N60C3D
Info of HGT30N60
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About HGT1N30N60A4D
PDF/DataSheet Download
Datasheet: HGT1N30N60A4D
File Size: 147560 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About HGT1N30N60A4D
PDF/DataSheet Download
Datasheet: HGT1N30N60A4D
File Size: 147560 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About HGT1N30N60A4D
PDF/DataSheet Download
Datasheet: HGT1N30N60A4D
File Size: 147560 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
HGT1Y40N60B3D General Description
The HGT1Y40N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49052. The diode used in anti-parallel with the IGBT is the development type TA49063.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49365.
HGT1Y40N60B3D Maximum Ratings
| HGT1Y40N60B3D | UNITS | ||
| Collector to Emitter Voltage | BVCES | 600 | V |
| Collector Current Continuous At TC = 25 At TC = 110 |
IC25 IC110 |
70 40 |
A A |
| Average Diode Forward Current at 110 Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed |
I(AVG) ICM VGES VGEM |
40 330 ±20 ±30 |
A A V V |
| Switching Safe Operating Area at TJ = 150, Figure 2 | SSOA | 100A at 600V | |
| Power Dissipation Total at TC = 25 Power Dissipation Derating TC > 25 Reverse Voltage Avalanche Energy Operating and Storage Junction Temperature Range |
PD EARV |
290 2.33 100 -55 to 150 |
W W/ mJ |
| Maximum Lead Temperature for Soldering Short Circuit Withstand Time (Note 2) at VGE = 15V Short Circuit Withstand Time (Note 2) at VGE = 10V |
TL tSC tSC |
260 2 10 |
s s |
CAUTION: Stresses above those listed in ''Absolute Maximum Ratings'' may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125, RG = 3.
HGT1Y40N60B3D Features
• 70A, 600V, TC = 25
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . 100ns at TJ = 150
• Short Circuit Rating
• Low Conduction Loss
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