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HGTD10N50F1, HGTD10N50F1S, HGTD1N120BNS

HGTD10N50F1, HGTD10N50F1S, HGTD1N120BNS Selling Leads, Datasheet

MFG:Intersil  Package Cooled:TO-251  D/C:TO

HGTD10N50F1, HGTD10N50F1S, HGTD1N120BNS Picture

HGTD10N50F1, HGTD10N50F1S, HGTD1N120BNS Datasheet download

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Part Number: HGTD10N50F1

 

MFG: Intersil

Package Cooled: TO-251

D/C: TO

 

 

 
 
 
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About HGTD10N50F1

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Datasheet: HGTD10N50F1

File Size: 33867 KB

Manufacturer: INTERSIL [Intersil Corporation]

Download : Click here to Download

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About HGTD10N50F1S

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Datasheet: HGTD10N50F1S

File Size: 33867 KB

Manufacturer: INTERSIL [Intersil Corporation]

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  • Vendor: Fairchild D/C: 06+& Qty: TO263  Adddate: 2024-04-29
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  • RUIFENG   China
    Contact: Ms.Miss Lin  
    Tel: 086-0755-23815723
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    (1)
  • HGT1S7N60

  • Vendor: Fairchild D/C: 04+& Qty: TO263  Adddate: 2024-04-29
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  • RUIFENG   China
    Contact: Ms.Miss Lin  
    Tel: 086-0755-23815723
    Fax: 086-0755-23815723
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  • Vendor: Fairchild D/C: 03+& Qty: TO3PL  Adddate: 2024-04-29
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  • RUIFENG   China
    Contact: Ms.Miss Lin  
    Tel: 086-0755-23815723
    Fax: 086-0755-23815723
    (1)

About HGTD1N120BNS

PDF/DataSheet Download

Datasheet: HGTD1N120BNS

File Size: 73694 KB

Manufacturer: INTERSIL [Intersil Corporation]

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HGTD10N50F1 General Description

The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integrated circuits.

HGTD10N50F1 Maximum Ratings

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .   VCES 400 500 V
Collector-Gate Voltage RGE = 1MW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .   VCGR 400 500 V
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  . VGE ±20 ±20 V
Collector Current Continuous at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  IC25 12 12 A
Collector Current Continuous at TC = +90 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  IC90 10 10 A
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  PD 75 75 W
Power Dissipation Derating TC > +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  0.6 0.6 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . .  .TJ, TSTG -55 to +150 -55 to +150

HGTD10N50F1 Features

• 10A, 400V and 500V
• VCE(ON) 2.5V Max.
• TFALL £1.4ms
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance

HGTD10N50F1 Typical Application

• Power Supplies
• Motor Drives
• Protective Circuits

HGTD10N50F1 Connection Diagram

HGTD10N50F1S General Description

The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integrated circuits.

HGTD10N50F1S Maximum Ratings

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .   VCES 400 500 V
Collector-Gate Voltage RGE = 1MW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .   VCGR 400 500 V
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  . VGE ±20 ±20 V
Collector Current Continuous at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  IC25 12 12 A
Collector Current Continuous at TC = +90 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  IC90 10 10 A
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  PD 75 75 W
Power Dissipation Derating TC > +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  0.6 0.6 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . .  .TJ, TSTG -55 to +150 -55 to +150

HGTD10N50F1S Features

• 10A, 400V and 500V
• VCE(ON) 2.5V Max.
• TFALL £1.4ms
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance

HGTD10N50F1S Typical Application

• Power Supplies
• Motor Drives
• Protective Circuits

HGTD10N50F1S Connection Diagram

HGTD1N120BNS Maximum Ratings

      

ProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage DrawingPackage Marking Convention**
HGTD1N120BNS9AFull ProductionRoHS Compliant$0.90TO-252(DPAK)2TAPE REEL TBDLine 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K Line 2: 1N120B
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product HGTD1N120BNS is available. Click here for more information .

HGTD1N120BNS Features

• 5.3A, 1200V, TC = 25
• 1200V Switching SOA Capability
• Typical EOFF. . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Temperature Compensating SABER™ Model
  Thermal Impedance SPICE Model
  www.intersil.com
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount
  Components to PC Boards"

HGTD1N120BNS Connection Diagram

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