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HGTG12N60B3D, HGTG12N60C3D, HGTG12N60D1

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Info of HGTG12N60B3D
Info of HGTG12N60C3D
Info of HGTG12N60D1

HGTG12N60B3D, HGTG12N60C3D, HGTG12N60D1 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:TO

HGTG12N60B3D, HGTG12N60C3D, HGTG12N60D1 Datasheet download

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Part Number: HGTG12N60C3D

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-247

D/C: TO

Description: IGBT UFS N-CHAN 600V 24A TO-247

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HGTG12N60B3D General Description

This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150. The IGBT used is the development type TA49171. The diode used in anti-parallel with the IGBT is the development type TA49188.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly developmental type TA49173.

HGTG12N60B3D Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES 600 V
Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 27 A
At T_C = 110. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C11012 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM110 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GES±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM ±30 V
Switching Safe Operating Area at T_J = 150 (Figure 2) . . . . . . . . . . . . . . . . SSOA 96A at 600V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 104 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_ARV 100 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG -55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 300
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg260
Short Circuit Withstand Time (Note 2) at V_GE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t_SC 5 µs
Short Circuit Withstand Time (Note 2) at V_GE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . .t_SC 10 µs

HGTG12N60B3D Features

• 27A, 600V, T_C = 25
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 112ns at T_J = 150
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards

HGTG12N60B3D Connection Diagram

HGTG12N60C3D Parameters

Technical/Catalog Information	HGTG12N60C3D
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	24A
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 15A
Power - Max	104W
Mounting Type	Through Hole
Package / Case	TO-247
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HGTG12N60C3D HGTG12N60C3D

HGTG12N60C3D General Description

The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.

The IGBT used is the development type TA49123. The diode used in anti parallel with the IGBT is the development type TA49061. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.

Formerly Developmental Type TA49117.

HGTG12N60C3D Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV_CES600 V
Collector Current Continuous At T_C= 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C2524 A
Collector Current Continuous At T_C= 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110 12 A
Average Diode Forward Current at 110. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_(AVG) 15 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM 96 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GEM±30 V
Switching Safe Operating Area at T_J= 150. . . . . . . . . . . . . . . . . . . . . . . . .SSOA 24A at 600V
Power Dissipation Total at T_C= 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_D104 W
Power Dissipation Derating T_C> 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . T_J, T_STG -40 to 150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 260
Short Circuit Withstand Time (Note 2) at V_GE= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . ..t_SC 4µs
Short Circuit Withstand Time (Note 2) at V_GE= 10V . . . . . . . . . . . . . . . . . . . . . . . . . . t_SC 13µs

HGTG12N60C3D Features

• 24A, 600V at T_C= 25
• Typical Fall Time. . . . . . . . . . . . . . . . 210ns at T_J= 150
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode

HGTG12N60C3D Connection Diagram

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