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HGTG18N120BN, HGTG18N120BND, HGTG20N100D2

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Info of HGTG18N120BN
Info of HGTG18N120BND
Info of HGTG20N100D2

HGTG18N120BN, HGTG18N120BND, HGTG20N100D2 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:TO

HGTG18N120BN, HGTG18N120BND, HGTG20N100D2 Datasheet download

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Part Number: HGTG18N120BN

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-247

D/C: TO

Description: IGBT NPT N-CHAN 1200V 54A TO-247

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HGTG18N120BN Parameters

Technical/Catalog Information	HGTG18N120BN
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	54A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 18A
Power - Max	390W
Mounting Type	Through Hole
Package / Case	TO-247
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HGTG18N120BN HGTG18N120BN

HGTG18N120BN General Description

The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49288.

HGTG18N120BN Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV_CES 1200 V
Collector Current Continuous At T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_C2554 A
Collector Current Continuous At T_C = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110 26 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM 160 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM ±30 V
Switching Safe Operating Area at T_J= 150 (Figure 2) . . . . . . . . . . . . . . SSOA 100A at 1200V
Power Dissipation Total at T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 390 W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12 W/
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AV125 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . T_J, T_STG -55 to 150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L 260
Short Circuit Withstand Time (Note 3) at V_GE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . .t_SC 8 µs
Short Circuit Withstand Time (Note 3) at V_GE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . .t_SC 15 µs

HGTG18N120BN Features

• 54A, 1200V, T_C = 25
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T_J = 150
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Temperature Compensating SABER™ Model

HGTG18N120BN Connection Diagram

HGTG18N120BND Parameters

Technical/Catalog Information	HGTG18N120BND
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	54A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 18A
Power - Max	390W
Mounting Type	Through Hole
Package / Case	TO-247
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HGTG18N120BND HGTG18N120BND

HGTG18N120BND General Description

The HGTG18N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49304.

HGTG18N120BND Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES1200 V
Collector Current Continuous At T_C= 25. . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 54 A
Collector Current Continuous At T_C= 110 . . . . . . . . . . . . . . . . . . . . . . . .I_C110 26 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_CM160A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..V_GEM ±30 V
Switching Safe Operating Area at T_J= 150 (Figure 2) . . . . . . . SSOA 100A at 1200V
Power Dissipation Total at T_C= 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . P_D 390W
Power Dissipation Derating T_C> 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .3.12 W/
Operating and Storage Junction Temperature Range . . . . . . . . . T_J, T_STG -55 to 150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L260
Short Circuit Withstand Time (Note 2) at V_GE= 15V . . . . . . . . . . . . . . . . . . . . . t_SC 8µs
Short Circuit Withstand Time (Note 2) at V_GE= 12V . . . . . . . . . . . . . . . . . . . ..t_SC 15µs

HGTG18N120BND Features

• 54A, 1200V, T_C= 25
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T_J= 150
• Short Circuit Rating
• Low Conduction Loss

HGTG18N120BND Connection Diagram

HGTG20N100D2 General Description

The HGTG20N100D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25 and +150.

IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

HGTG20N100D2 Maximum Ratings

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES 1000 V
Collector-Gate Voltage R_GE = 1MW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CGR 1000 V
Collector Current Continuous at T_C = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 34 A
Collector Current Continuous at T_C = +90 . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_C90 20 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM 100 A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES ±20 V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM ±30 V
Switching Safe Operating Area at T_J = +150 . . . . . . . . . . . . . . SSOA 100A at 0.8 BV_CES
Power Dissipation Total at T_C= +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 150 W
Power Dissipation Derating T_C > +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.20 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . .T_J, T_STG -55 to +150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 260
(0.125 inch from case for 5 seconds)
Short Circuit Withstand Time (Note 2) at V _GE= 15V . . . . . . . . . . . . . . . . . . . . . . . .t_SC 3 s
Short Circuit Withstand Time (Note 2) at V_GE= 10V . . . . . . . . . . . . . . . . . . . . . . t_SC 15 s

HGTG20N100D2 Features

• 34A, 1000V
• Latch Free Operation
• Typical Fall Time 520ns
• High Input Impedance
• Low Conduction Loss

HGTG20N100D2 Connection Diagram

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