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The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
• >100kHz Operation at 390V, 20A • 200kHz Operation at 390V, 12A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at TJ = 125 • Low Conduction Loss • Temperature Compensating SABER™ Model www.intersil.com • Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards
HGTG20N60A4 Connection Diagram
HGTG20N60A4D Parameters
Technical/Catalog Information
HGTG20N60A4D
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Input Type
Standard
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
70A
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 20A
Power - Max
290W
Mounting Type
Through Hole
Package / Case
TO-247
Packaging
Bulk
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
HGTG20N60A4D HGTG20N60A4D
HGTG20N60A4D General Description
The HGTG20N60A4D is a MOS gated high voltage switchingdevice combining the best features of MOSFETs and bipolartransistors. This device has the high input impedance of aMOSFET and the low on-state conduction loss of a bipolartransistor. The much lower on-state voltage drop varies onlymoderately between 25oC and 150oC. The IGBT used is thedevelopment type TA49339. The diode used in anti-parallelis the development type TA49372.
This IGBT is ideal for many high voltage switchingapplications operating at high frequencies where lowconduction losses are essential. This device has beenoptimized for high frequency switch mode powersupplies.
Formerly Developmental Type TA49341.
HGTG20N60A4D Maximum Ratings
Product
Product status
Eco Status
Pricing*
Package type
Leads
Packing method
Package Drawing
Package Marking Convention**
HGTG20N60A4D
Full Production
RoHS Compliant
$5.38
TO-247
3
RAIL
N/A
Line 1:$Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2: 20N60A4D
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples
Package marking information for product HGTG20N60A4D is available. Click here for more information .
HGTG20N60B3 Parameters
Technical/Catalog Information
HGTG20N60B3
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Input Type
Standard
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
40A
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 20A
Power - Max
165W
Mounting Type
Through Hole
Package / Case
TO-247
Packaging
Tube
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
HGTG20N60B3 HGTG20N60B3
HGTG20N60B3 General Description
The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
• 40A, 600V at TC = 25 • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150 • Short Circuit Rated • Low Conduction Loss • Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
