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HGTG27N120BN, HGTG30N120CN, HGTG30N120D2

Table of contents:
Info of HGTG27N120BN
Info of HGTG30N120CN
Info of HGTG30N120D2

HGTG27N120BN, HGTG30N120CN, HGTG30N120D2 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:386

HGTG27N120BN, HGTG30N120CN, HGTG30N120D2 Datasheet download

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Part Number: HGTG27N120BN

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-247

D/C: 386

Description: IGBT NPT N-CH 1200V 72A TO-247

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HGTG27N120BN Parameters

Technical/Catalog Information	HGTG27N120BN
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	72A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 27A
Power - Max	500W
Mounting Type	Through Hole
Package / Case	TO-247
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HGTG27N120BN HGTG27N120BN

HGTG27N120BN General Description

The HGTG27N120BN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49280.

HGTG27N120BN Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV_CES 1200 V
Collector Current Continuous At T_C= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 72 A
Collector Current Continuous At T_C = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110 34 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_CM 216 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM ±30 V
Switching Safe Operating Area at T_J= 150oC (Figure 2) . . . . . . . . . . SSOA 150A at 1200V
Power Dissipation Total at T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 500 W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.0 W/
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AV 135 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . T_J, T_STG-55 to 150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 260
Short Circuit Withstand Time (Note 3) at V_GE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . .t_SC 8 µs
Short Circuit Withstand Time (Note 3) at V_GE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . t_SC 15 µs

HGTG27N120BN Features

• 72A, 1200V, TC = 25
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150
• Short Circuit Rating
• Low Conduction Loss
• Thermal Impedance SPICE Model Temperature Compensating SABER™ Model www.intersil.com
• Avalanche Rated

HGTG27N120BN Connection Diagram

HGTG30N120CN General Description

The HGTG30N120CN is a Non-PunchT hrough (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49281.

HGTG30N120CN Maximum Ratings

	HGTG30N120CN	UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . .. . . . . . .BV_CESCollector Current Continuous At T_C= 25 . . . . . .. .. . . . . . . . . . . . . . . . I_C25 At T_C= 110oC . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . I_C110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CMGate to Emitter Voltage Continuous. . . . . . . . . . .. . . . . . . . . . . . . . . . V_GES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . .. .V_GEM Switching Safe Operating Area at TJ= 150oC (Figure 2) . . . . . . . . . .. . . . . . . SSOA Power Dissipation Total at TC= 25 . . . . . . . . . . . . . .. . . . .. . . . .. . . . P_D Power Dissipation Derating TC> 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . E_AV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . T_J, T_STGMaximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . T_LShort Circuit Withstand Time (Note 3) at V_GE= 15V . . . . . . . . . . . . . . . . . . . .t_S Short Circuit Withstand Time (Note 3) at V= 12V . . . . . . . . . . . . . . . .. . . . .t_SC	1200 75 40 240 ± 20 ± 30 150A at 1200V 500 4.0 135 55 to 150 260 8 15	V A A A V V W W/ mJ o C o C

HGTG30N120CN Features

• 75A, 1200V, TC= 25
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ= 150
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
•Thermal Impedance
SPICE Model
Temperature Compensating
SABER™ Model

HGTG30N120D2 General Description

The HGTG30N120D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25 and +150.

The IGBTs are ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

HGTG30N120D2 Maximum Ratings

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES 1200 V
Collector-Gate Voltage, R_GE =1MW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_CGR 1200 V
Collector Current Continuous at T_C= +25 . . . . . . . . . . . . . . . . . . . . . . . . . . .I_C25 50 A
Collector Current Continuous at V_GE =15V at T_C = +90 . . . . . . . . . . . . . . . . I_C90 30 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM 200 A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES ±20 V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GEM ±30 V
Switching Safe Operating Area at T_J = +150 . . . . . . . . . . . . . .SSOA 200A at 0.8 B_VCES
Power Dissipation Total at T_C = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 208 W
Power Dissipation Total Derating TC > +25 . . . . . . . . . . . . . . . . . . . . . . . . . .1.67 W/
Operating and Storage Junction Temperature Range . . . . . . . . . .T_J, T_STG -55 to +150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260
Short Circuit Withstand Time (Note 2) at V_GE = 15V . . . . . . . . . . . . . . . . . . . . . t_SC6 mS
Short Circuit Withstand Time (Note 2) at V_GE = 10V . . . . . . . . . . . . . . . . . . . . t_SC 15 mS

HGTG30N120D2 Features

• 30A, 1200V
• Latch Free Operation
• Typical Fall Time - 580ns
• High Input Impedance
• Low Conduction Loss

HGTG30N120D2 Connection Diagram

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