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HGTP12N60C3, HGTP12N60C3D, HGTP12N60D1

Table of contents:
Info of HGTP12N60C3
Info of HGTP12N60C3D
Info of HGTP12N60D1

HGTP12N60C3, HGTP12N60C3D, HGTP12N60D1 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:09+

HGTP12N60C3, HGTP12N60C3D, HGTP12N60D1 Datasheet download

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Part Number: HGTP12N60C3

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220

D/C: 09+

Description: IGBT SMPS N-CH 600V 24A TO-220AB

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HGTP12N60C3 Parameters

Technical/Catalog Information	HGTP12N60C3
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	24A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 12A
Power - Max	104W
Mounting Type	Through Hole
Package / Case	TO-220AB
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HGTP12N60C3 HGTP12N60C3

HGTP12N60C3 General Description

The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49123.

HGTP12N60C3 Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV_CES 600 V
Collector Current Continuous At T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_C2524 A
Collector Current Continuous At T_C = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_C110 12 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM 96 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM ±30 V
Switching Safe Operating Area at T_J= 150 (Figure 14) . . . . . . . . . . . . . SSOA 24A at 600V
Power Dissipation Total at T_C = 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 104 W
Power Dissipation Derating T_C > 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_ARV 100 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . T_J, T_STG -40 to 150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 260
Short Circuit Withstand Time (Note 2) at V_GE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . .t_SC 4 µs
Short Circuit Withstand Time (Note 2) at V_GE = 10V. . . . . . . . . . . . . . . . . . . . . . . . ..t_SC 13 µs

HGTP12N60C3 Features

• 24A, 600V at T_C = 25
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 230ns at T_J= 150
• Short Circuit Rating
• Low Conduction Loss

HGTP12N60C3 Connection Diagram

HGTP12N60C3D Parameters

Technical/Catalog Information	HGTP12N60C3D
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	24A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 12A
Power - Max	104W
Mounting Type	Through Hole
Package / Case	TO-220AB
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HGTP12N60C3D HGTP12N60C3D

HGTP12N60C3D General Description

This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti-parallel with the IGBT is the development type TA49188.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.

Formerly Developmental Type TA49182.

HGTP12N60C3D Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES600 V
Collector Current Continuous
At T_C= 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_C25 24 A
At T_C = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C11012 A
Average Diode Forward Current at 110. . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_(AVG) 12 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. I_CM 96 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GEM ±30 V
Switching Safe Operating Area at T_J= 150 (Figure 14) . . . . . . . . . . . SSOA 24A at 600V
Power Dissipation Total at T_C= 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D104 W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . 0.83 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . T_J, T_STG -40 to 150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L 260
Short Circuit Withstand Time (Note 2) at V_GE = 15V. . . . . . . . . . . . . . . . . . . . . . . . t_SC 4 µs
Short Circuit Withstand Time (Note 2) at V_GE = 10V. . . . . . . . . . . . . . . . . . . . . . . t_SC 13 µs

HGTP12N60C3D Features

• 24A, 600V at T_C = 25
• Typical Fall Time at T_J = 150 . . . . . . . . . . . . . . . . 210ns
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode

HGTP12N60D1 General Description

The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25 and +150.

The IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

HGTP12N60D1 Maximum Ratings

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . .. . . .. .. .. .. .. .. . BVCES 600 V
Collector-Gate Voltage RGE = 1MW . . . . . . . . . . .. . . . . . .. .. .. .. .. .. .. . BVCGR 600 V
Collector Current Continuous at TC = +25 . . . . . . . . . . . . . . .. .. .. .. .. .. . IC25 21 A
at VGE = 15V at TC = +90 . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .. .. .. .. .. IC90 12 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . .. .. .. .. .. .. .. ICM 48 A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . .. .. .. .. .. .. VGES ±25 V
Switching Safe Operating Area at TJ = +150. . .. .. .. .. .. .. .. SSOA 30A at 0.8 BVCES
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . .. .. .. .. .. .. .. . PD 75 W
Power Dissipation Derating TC > +25 . . . . . . . . . . .. . . . . . . . . .. .. .. .. .. .. . 0.6 W/
Operating and Storage Junction Temperature Range . . . .. .. ...TJ, TSTG -55 to +150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . .TL 260

HGTP12N60D1 Features

• 12A, 600V
• Latch Free Operation
• Typical Fall Time <500ns
• High Input Impedance
• Low Conduction Loss

HGTP12N60D1 Connection Diagram

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