HGTP14N36G3VL, HGTP14N40F3VL, HGTP14N41G3VL Selling Leads, Datasheet
MFG:FSC Package Cooled:TO-220 D/C:TO
HGTP14N36G3VL, HGTP14N40F3VL, HGTP14N41G3VL Datasheet download
Part Number: HGTP14N36G3VL
MFG: FSC
Package Cooled: TO-220
D/C: TO
HGTP14N36G3VL, HGTP14N40F3VL, HGTP14N41G3VL
- Table of contents:
Info of HGTP14N36G3VL
Info of HGTP14N40F3VL
Info of HGTP14N41G3VL
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About HGTP14N36G3VL
PDF/DataSheet Download
Datasheet: HGTP14N36G3VL
File Size: 113316 KB
Manufacturer: INTERSIL [Intersil Corporation]
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About HGTP14N40F3VL
PDF/DataSheet Download
Datasheet: HGTP14N40F3VL
File Size: 87215 KB
Manufacturer: INTERSIL [Intersil Corporation]
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About HGT1N30N60A4D
PDF/DataSheet Download
Datasheet: HGT1N30N60A4D
File Size: 147560 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
HGTP14N36G3VL General Description
This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit.
HGTP14N36G3VL Maximum Ratings
Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCER 390 V
Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS 24 V
Collector Current Continuous at VGE = 5V, TC = +25. . . . . . . . . . . . . . . . . . . . IC25 18 A
Collector Current Continuous at VGE = 5V, TC = +100. . . . . . . . . . . . . . . . . . .IC100 14 A
Gate-Emitter Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±10 V
Inductive Switching Current at L = 2.3mH, TC = +25 . . . . . . . . . . . . . . . . . . . ISCIS 17 A
Inductive Switching Current at L = 2.3mH, TC = + 175 . . . . . . . . . . . . . . . . . .ISCIS 12 A
Collector to Emitter Avalanche Energy at L = 2.3mH, TC = +25. . . . . . . . . . . EAS 332 mJ
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 100 W
Power Dissipation Derating TC > +25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.67 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . TJ, TSTG -40 to +175
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL 260
Electrostatic Voltage at 100pF, 1500Ω. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD 6 KV
Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS 24 V
Collector Current Continuous at VGE = 5V, TC = +25. . . . . . . . . . . . . . . . . . . . IC25 18 A
Collector Current Continuous at VGE = 5V, TC = +100. . . . . . . . . . . . . . . . . . .IC100 14 A
Gate-Emitter Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±10 V
Inductive Switching Current at L = 2.3mH, TC = +25 . . . . . . . . . . . . . . . . . . . ISCIS 17 A
Inductive Switching Current at L = 2.3mH, TC = + 175 . . . . . . . . . . . . . . . . . .ISCIS 12 A
Collector to Emitter Avalanche Energy at L = 2.3mH, TC = +25. . . . . . . . . . . EAS 332 mJ
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 100 W
Power Dissipation Derating TC > +25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.67 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . TJ, TSTG -40 to +175
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL 260
Electrostatic Voltage at 100pF, 1500Ω. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD 6 KV
HGTP14N36G3VL Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• TJ = 175
• Ignition Energy Capable
• Internal Voltage Clamp
• ESD Gate Protection
• TJ = 175
• Ignition Energy Capable
HGTP14N36G3VL Connection Diagram
HGTP14N40F3VL General Description
This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the drain and the gate and ESD protection for the logic level gate. Some specifications are unique to this automotive application and are intended to assure device survival in this harsh environment.
The development type number for this device is TA49023.
The development type number for this device is TA49023.
HGTP14N40F3VL Maximum Ratings
Collector-Emitter Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 420 V
Collector-Gate Breakdown Voltage RGE = 10kW . . . . . . . . . . . . . . . . . . . . . . . . BVCGR 420 V
Collector Current Continuous
VGE = 4.5V at TC = +25o . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC25 19A
VGE = 4.5V at TC = +90 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C90 14A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±10 V
Gate-Emitter Voltage Pulsed or . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±12 V
Gate-Emitter Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IGEM ±10 mA
Open Secondary Turn-Off Current
L = 2.3mH at +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICO 17A
L = 2.3mH at +150 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICO 12A
Drain to Source Avalanche Energy at L = 2.3mH, TC = +25. . . . . . . . . . . . . . . . . EAS 330 mJ
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PT 83 W
Power Dissipation Derating TC > +25 0.67 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . TJ, TSTG -40 to +150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL 260
Electrostatic Voltage at 100pF, 1500W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD 6 KV
Collector-Gate Breakdown Voltage RGE = 10kW . . . . . . . . . . . . . . . . . . . . . . . . BVCGR 420 V
Collector Current Continuous
VGE = 4.5V at TC = +25o . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC25 19A
VGE = 4.5V at TC = +90 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C90 14A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±10 V
Gate-Emitter Voltage Pulsed or . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±12 V
Gate-Emitter Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IGEM ±10 mA
Open Secondary Turn-Off Current
L = 2.3mH at +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICO 17A
L = 2.3mH at +150 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICO 12A
Drain to Source Avalanche Energy at L = 2.3mH, TC = +25. . . . . . . . . . . . . . . . . EAS 330 mJ
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PT 83 W
Power Dissipation Derating TC > +25 0.67 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . TJ, TSTG -40 to +150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL 260
Electrostatic Voltage at 100pF, 1500W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD 6 KV
HGTP14N40F3VL Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• TJ = +150
• Ignition Energy Capable
• Internal Voltage Clamp
• ESD Gate Protection
• TJ = +150
• Ignition Energy Capable
HGTP14N40F3VL Typical Application
• Automotive Ignition
• Small Engine Ignition
• Fuel Ignitor
• Small Engine Ignition
• Fuel Ignitor
HGTP14N40F3VL Connection Diagram
HGTP14N41G3VL General Description
This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit.
Formerly Developmental Type TA49360.
HGTP14N41G3VL Maximum Ratings
HGT1S14N41G3VLS,
HGTP14N41G3VL UNITS
Collector to Emitter Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCER 430 V
Collector to Emitter Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 445 V
Emitter to Collector Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVECS 24 V
Collector Current Continuous at VGE = 5V, TC = 25 . . . . . . . . . . . . . . . . . . .IC25 25 A
at VGE = 5V, TC = 110 . . . . . . . . . . . . . . . . . .IC110 18 A
Gate to Emitter Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM ±10 V
Inductive Switching Current at L = 3 mH, TC = 25 . . . . . . . . . . . . . . . . . . . . ISCIS 15 A
at L = 3 mH, TC = 150. . . . . . . . . . . . . . . . . . . .ISCIS 11.5 A
Collector to Emitter Avalanche Energy at L = 3 mH, TC = 25 . . . . . . . . . . . . .EAS 340 mJ
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 136 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.91 W/
Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG -55 to 175
Operating Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ -55 to 175
Electrostatic Discharge Voltage HBM at 250pF, 1500 All Pin Configurations . . ESD 5 kV
Electrostatic Discharge Voltage MM at 200pF, 0 All Pin Configurations . . . . . . ESD 2 kV
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG 260
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
HGTP14N41G3VL UNITS
Collector to Emitter Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCER 430 V
Collector to Emitter Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 445 V
Emitter to Collector Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVECS 24 V
Collector Current Continuous at VGE = 5V, TC = 25 . . . . . . . . . . . . . . . . . . .IC25 25 A
at VGE = 5V, TC = 110 . . . . . . . . . . . . . . . . . .IC110 18 A
Gate to Emitter Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM ±10 V
Inductive Switching Current at L = 3 mH, TC = 25 . . . . . . . . . . . . . . . . . . . . ISCIS 15 A
at L = 3 mH, TC = 150. . . . . . . . . . . . . . . . . . . .ISCIS 11.5 A
Collector to Emitter Avalanche Energy at L = 3 mH, TC = 25 . . . . . . . . . . . . .EAS 340 mJ
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 136 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.91 W/
Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG -55 to 175
Operating Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ -55 to 175
Electrostatic Discharge Voltage HBM at 250pF, 1500 All Pin Configurations . . ESD 5 kV
Electrostatic Discharge Voltage MM at 200pF, 0 All Pin Configurations . . . . . . ESD 2 kV
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG 260
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. May be exceeded if IGEM is limited to 10mA.
HGTP14N41G3VL Features
• Ignition Energy = 340mJ at TJ (STARTING) = 25
• Typical Internal Clamp Voltage = 410V at TJ = 25
• Logic Level Gate Drive
• ESD Gate Protection
• TJ = 175
• Internal Series and Shunt Gate Resistors
• 24V Reverse Battery Capability
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
• Typical Internal Clamp Voltage = 410V at TJ = 25
• Logic Level Gate Drive
• ESD Gate Protection
• TJ = 175
• Internal Series and Shunt Gate Resistors
• 24V Reverse Battery Capability
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
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