HGTP1N120BN, HGTP1N120BND, HGTP1N120CN Selling Leads, Datasheet
MFG:Fairchild Package Cooled:N/A D/C:09+
HGTP1N120BN, HGTP1N120BND, HGTP1N120CN Datasheet download
Part Number: HGTP1N120BN
MFG: Fairchild
Package Cooled: N/A
D/C: 09+
HGTP1N120BN, HGTP1N120BND, HGTP1N120CN
- Table of contents:
Info of HGTP1N120BN
Info of HGTP1N120BND
Info of HGTP1N120CN
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About HGTP1N120BN
PDF/DataSheet Download
Datasheet: HGTP1N120BN
File Size: 73694 KB
Manufacturer: INTERSIL [Intersil Corporation]
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About HGTP1N120BND
PDF/DataSheet Download
Datasheet: HGTP1N120BND
File Size: 77574 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About HGTP1N120CN
PDF/DataSheet Download
Datasheet: HGTP1N120CN
File Size: 79017 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
HGTP1N120BN General Description
The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49316.
HGTP1N120BN Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 1200 V
Collector Current Continuous At TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 5.3 A
Collector Current Continuous At TC = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC110 2.7 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM 6 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. VGEM ±30 V
Switching Safe Operating Area at TJ = 150 (Figure 2) . . . . . . . . . . . . . . . . . .SSOA 6A at 1200V
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 60 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.476 W/
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV 10 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 260
Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 8 µs
Short Circuit Withstand Time (Note 3) at VGE = 13V. . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 13 µs
Collector Current Continuous At TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 5.3 A
Collector Current Continuous At TC = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC110 2.7 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM 6 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. VGEM ±30 V
Switching Safe Operating Area at TJ = 150 (Figure 2) . . . . . . . . . . . . . . . . . .SSOA 6A at 1200V
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 60 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.476 W/
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV 10 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 260
Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 8 µs
Short Circuit Withstand Time (Note 3) at VGE = 13V. . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 13 µs
HGTP1N120BN Features
• 5.3A, 1200V, TC = 25
• 1200V Switching SOA Capability
• Typical EOFF. . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.intersil.com
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount
Components to PC Boards"
• 1200V Switching SOA Capability
• Typical EOFF. . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.intersil.com
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount
Components to PC Boards"
HGTP1N120BN Connection Diagram
HGTP1N120BND General Description
The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The IGBT is development type number TA49316. The diode used in anti-parallel with the IGBT is the RHRD4120 (TA49056).
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49314.
HGTP1N120BND Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 1200 V
Collector Current Continuous At TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 5.3 A
Collector Current Continuous At TC = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 2.7 A
Average Rectified Forward Current at TC = 148 . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) 4 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 6 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150 (Figure 2) . . . . . . . . . . . . . . . . .SSOA 6A at 1200V
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 60 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.476 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . .TJ, TSTG -55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 260
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 8 µs
Short Circuit Withstand Time (Note 2) at VGE = 13V. . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 13 µs
Collector Current Continuous At TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 5.3 A
Collector Current Continuous At TC = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 2.7 A
Average Rectified Forward Current at TC = 148 . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) 4 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 6 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150 (Figure 2) . . . . . . . . . . . . . . . . .SSOA 6A at 1200V
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 60 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.476 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . .TJ, TSTG -55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 260
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 8 µs
Short Circuit Withstand Time (Note 2) at VGE = 13V. . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 13 µs
HGTP1N120BND Features
• 5.3A, 1200V, TC = 25
• 1200V Switching SOA Capability
• Typical EOFF. . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150
• Short Circuit Rating
• Low Conduction Loss
• Temperature Compensating SABER™ Mode
Thermal Impedance SPICE Model www.intersil.com/
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount
Components to PC Boards"
• 1200V Switching SOA Capability
• Typical EOFF. . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150
• Short Circuit Rating
• Low Conduction Loss
• Temperature Compensating SABER™ Mode
Thermal Impedance SPICE Model www.intersil.com/
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount
Components to PC Boards"
HGTP1N120BND Connection Diagram
HGTP1N120CN General Description
The HGTD1N120CNS, and the HGTP1N120CN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49317.
HGTP1N120CN Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 1200 V
Collector Current Continuous At TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 6.2 A
Collector Current Continuous At TC = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC110 3.2 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 6 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150 (Figure 2) . . . . . . . . . . . . . . .SSOA 6A at 1200V
Power Dissipation Total at TC = 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 60 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.476 W/
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV 10 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . TJ, TSTG -55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 260
Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . tSC 8 µs
Short Circuit Withstand Time (Note 3) at VGE = 13V. . . . . . . . . . . . . . . . . . . . . . . . . tSC 11 µs
Collector Current Continuous At TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 6.2 A
Collector Current Continuous At TC = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC110 3.2 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 6 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150 (Figure 2) . . . . . . . . . . . . . . .SSOA 6A at 1200V
Power Dissipation Total at TC = 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 60 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.476 W/
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV 10 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . TJ, TSTG -55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 260
Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . tSC 8 µs
Short Circuit Withstand Time (Note 3) at VGE = 13V. . . . . . . . . . . . . . . . . . . . . . . . . tSC 11 µs
HGTP1N120CN Features
• 6.2A, 1200V, TC = 25
• 1200V Switching SOA Capability
• Typical EOFF. . . . . . . . . . . . . . . . . . . 200µJ at TJ = 150
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.intersil.com
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount
Components to PC Boards"
HGTP1N120CN Connection Diagram
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