Position: Home > DataSheet > Index H > HGT Series > HGTP1N120CND, HGTP20N35G3VL, HGTP20N36G3VL

Low Cost Custom Prototype PCB Manufacturer

HGTP1N120CND, HGTP20N35G3VL, HGTP20N36G3VL

Table of contents:
Info of HGTP1N120CND
Info of HGTP20N35G3VL
Info of HGTP20N36G3VL

HGTP1N120CND, HGTP20N35G3VL, HGTP20N36G3VL Selling Leads, Datasheet

MFG:Intersil/FAIRCHILD Package Cooled:TO-220AB D/C:TO

HGTP1N120CND, HGTP20N35G3VL, HGTP20N36G3VL Picture

HGTP1N120CND, HGTP20N35G3VL, HGTP20N36G3VL Datasheet download

Five Points

Part Number: HGTP1N120CND

MFG: Intersil/FAIRCHILD

Package Cooled: TO-220AB

D/C: TO

Attentive hint

Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.

How to buy ?

How long will receive a response.

Top Sellers:

TOP

HGTP1N120CND General Description

The HGTP1N120CND and the HGT1S1N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

The IGBT is development type number TA49317. The diode used in anti-parallel with the IGBT is the RHRD4120 (TA49056).

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly developmental type TA49315.

HGTP1N120CND Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV_CES1200 V
Collector Current Continuous At T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 6.2 A
Collector Current Continuous At T_C = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110 3.2 A
Average Rectified Forward Current at T_C = 148 . . . . . . . . . . . . . . . . . . . . . . . . . I_F(AV) 4 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM 6 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM ±30 V
Switching Safe Operating Area at T_J = 150 (Figure 2) . . . . . . . . . . . . . . SSOA 6A at 1200V
Power Dissipation Total at T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_D 60 W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.476 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . T_J, T_STG -55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6cm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 300
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg 260
Short Circuit Withstand Time (Note 2) at V_GE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . t_SC 8 µs
Short Circuit Withstand Time (Note 2) at V_GE= 13V. . . . . . . . . . . . . . . . . . . . . . . . . . t_SC 11 µs

HGTP1N120CND Features

• 6.2A, 1200V, T_C = 25
• 1200V Switching SOA Capability
• Typical EOFF. . . . . . . . . . . . . . . . . . . 200µJ at T_J = 150
• Short Circuit Rating
• Low Conduction Loss
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model www.intersil.com/
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount
Components to PC Boards"

HGTP1N120CND Connection Diagram

HGTP20N35G3VL General Description

This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit.

HGTP20N35G3VL Maximum Ratings

Collector-Emitter Bkdn Voltage At 10mA, R_GE = 1kΩ. . . . . . . . . . . . . . . . . . . . . BV_CER 375 V
Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_ECS 24 V
Collector Current Continuous At VGE = 5.0V, T_C = +25, Figure 7 . . . . . . . . . . . .I_C25 20 A
Collector Current Continuous At VGE = 5.0V, T_C = +100 . . . . . . . . . . . . . . . . . I_C100 20 A
Gate-Emitter-Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES ±10 V
Inductive Switching Current At L = 2.3mH, T_C = +25 . . . . . . . . . . . . . . . . . . . I_SCIS 26 A
Inductive Switching Current At L = 2.3mH, T_C = +17 . . . . . . . . . . . . . . . . . . . . I_SCIS 18 A
Collector to Emitter Avalanche Energy At L = 2.3mH, T_C = +25 . . . . . . . . . . . E_AS 775 mJ
Power Dissipation Total At T_C = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 150 W
Power Dissipation Derating T_C > +25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.0 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . T_J, T_STG -40 to +175
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 260
Electrostatic Voltage at 100pF, 1500Ω. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..ESD 6 KV

HGTP20N35G3VL Features

• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• T_J = 175
• Ignition Energy Capable

HGTP20N35G3VL Connection Diagram

HGTP20N36G3VL General Description

HGTP20N36G3VL Maximum Ratings

Parameters	Symbol	VALUE	Units
Collector-Emitter Bkdn Voltage At 10mA, R_GE = 1k.	BV_CER	395	V
Emitter-Collector Bkdn Voltage At 10mA	BV_ECS	28	V
Collector Current Continuous At V_GE = 5.0V, TC = +25^oC, Figure 7	I_C25	37.7	A
At V_GE = 5.0V, T_C = +100^oC	I_C100	26	A
Gate-Emitter-Voltage (Note)	V_GES	±10	V
Inductive Switching Current At L = 2.3mH, T_C = +25^o0C	I_SCIS	21	A
At L = 2.3mH, TC = +150^oC	I_SCIS	16	A
Collector to Emitter Avalanche Energy At L = 2.3mH, T_C = +25^oC	E_AS	500	mJ
Power Dissipation Total At T_C = +25^oC	P_D	150	W
Power Dissipation Derating T_C > +25^oC		1.0	W/^oC
Operating and Storage Junction Temperature Range	T_J, T_STG	-40 to +175	^oC
Maximum Lead Temperature for Soldering	T	260	^oC
Electrostatic Voltage at 100pF, 1500	E_SD	6	KV

NOTE: May be exceeded if I_GEM is limited to 10mA.

HGTP20N36G3VL Features

• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• T_J = 175^oC
• Ignition Energy Capable

Hotspot Suppliers Product

Product List A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9

MT58L64L18CT-10

Price: 4-6 USD

MT58L64L18CT-10 TQFP100
DL-7140-211M

Price: 5-6.5 USD

DL-7140-211M laser tube
74LVC74APG

Price: 4-5 USD

74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2

Price: 6.5-8 USD

CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX

Price: 0.284-0.286 USD

PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2

Price: 1-2 USD

IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB

Price: 1-2 USD

a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1

Price: 0.124-0.2 USD

PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L

Price: 0.177-0.178 USD

RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A

Price: 0.053-0.055 USD

STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013

Price: 1.45-1.5 USD

STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B

Price: 0.073-0.075 USD

SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components