HGTP3N60C3D, HGTP5N120, HGTP5N120BN Selling Leads, Datasheet
MFG:Fairchild Package Cooled:N/A D/C:09+
HGTP3N60C3D, HGTP5N120, HGTP5N120BN Datasheet download
Part Number: HGTP3N60C3D
MFG: Fairchild
Package Cooled: N/A
D/C: 09+
HGTP3N60C3D, HGTP5N120, HGTP5N120BN
- Table of contents:
Info of HGTP3N60C3D
Info of HGTP5N120
Info of HGTP5N120BN
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About HGTP3N60C3D
PDF/DataSheet Download
Datasheet: HGTP3N60C3D
File Size: 280444 KB
Manufacturer: HARRIS [Harris Corporation]
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About HGTP5N120
PDF/DataSheet Download
Datasheet: HGTP5N120
File Size: 91363 KB
Manufacturer: INTERSIL [Intersil Corporation]
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About HGTP5N120BN
PDF/DataSheet Download
Datasheet: HGTP5N120BN
File Size: 84508 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
HGTP3N60C3D General Description
The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25 and +150. The IGBT used is the development type TA49113. The diode used in anti-parallel with the IGBT is the development type TA49055.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.
HGTP3N60C3D Maximum Ratings
UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V
Collector Current Continuous
At TC = +25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 6 A
At TC = +110. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 3 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 24 A
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES ±20 V
Gate-Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = +150, Fig. 14. . . . . . . . . SSOA 18A at 480 V
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . PD 33 W
Power Dissipation Derating TC > +25. . . . . . . . . . . . . . . . . . . . . . . . . . 0.27 W/
Operating and Storage Junction Temperature Range . . . . . TJ, TSTG -40 to +150
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . TL 260
Short Circuit Withstand Time (Note 2) at VGE = 10V, Fig 6 . . . . . . . . . . . . .tSC 8 s
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = +125, RGE = 82W.
HGTP3N60C3D Features
• 6A, 600V at TC = +25
• 600V Switching SOA Capability
• Typical Fall Time - 130ns at TJ = +150
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
• 600V Switching SOA Capability
• Typical Fall Time - 130ns at TJ = +150
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
HGTP5N120BN General Description
The HGTP5N120BN and the HGT1S5N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49308.
HGTP5N120BN Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 1200 V
Collector Current Continuous At TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 21 A
Collector Current Continuous At TC = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 10 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 40 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150 . . . . . . . . . . . . . . . . . . . . . . SSOA 30A at 1200V
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 167 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.33 W/
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV 36 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . TJ, TSTG -55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..Tpkg 260
Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . tSC 8 µs
Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . .tSC 15 µs
HGTP5N120BN Features
• 21A, 1200V, TC = 25
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.intersil.com
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.intersil.com
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
HGTP5N120BN Connection Diagram
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